Multi-unit synthesis type reflector based method for manufacturing power type light emitting diode

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of difficult production of power-type vertical light-emitting diodes, large thermal strain, etc., achieve high yield, ensure welding strength, and improve luminous efficiency Effect

Active Publication Date: 2010-07-07
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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Problems solved by technology

[0004] In order to solve the above-mentioned problem that the GaN epitaxy peels off after the sapphire is peeled off due to the large thermal strain of Ag in the high-temperature welding process, it is difficult to manufacture a power-type vertical light-emitting diode. The present invention aims to propose a power-type light-emitting diode based on a multi-unit synthetic reflector. production method

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  • Multi-unit synthesis type reflector based method for manufacturing power type light emitting diode
  • Multi-unit synthesis type reflector based method for manufacturing power type light emitting diode
  • Multi-unit synthesis type reflector based method for manufacturing power type light emitting diode

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Embodiment Construction

[0033] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0034] A method for manufacturing a power-type light-emitting diode based on a multi-unit synthetic reflector, the steps of which are as follows:

[0035] Step 1: If Figure 1a As shown, a GaN-based LED luminescent material 110 is epitaxially grown on a sapphire substrate 100 by MOCVD method, and the luminescent material sequentially includes an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer;

[0036] Step 2: If Figure 1b As shown, electron beam evaporation is used to deposit p metal and reflective metal film 120 on the surface of p-type GaN-based semiconductor layer, Ag is selected, and the thickness is 1000nm; Figure 1c As shown in Fig. 1, chemical etching is used to remove the Ag reflective metal film in the surrounding area of ​​each periodic device and the central part of the periodic device, th...

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Abstract

The invention discloses a multi-unit synthesis type reflector based method for manufacturing a power type vertical light emitting diode. The method micro-isolates the reflector of the power type vertical light emitting diode to form the multi-unit synthesis type reflector, greatly reduces the influence of thermal stress generated in a high-temperature welding process on Ag and semiconductor surface adhesive force, further fills highly resistant materials with equal altitude in each unit reflector micro-isolation belt, provides a flat welding surface to ensure welding strength, realizes high yield of the power type vertical light emitting diode, and simultaneously realizes the current blocking structure design to improve the luminous efficiency of the power type vertical light emitting diode.

Description

technical field [0001] The invention relates to a method for manufacturing a vertical light-emitting diode, in particular to a method for manufacturing a power-type light-emitting diode based on a multi-unit synthetic reflector. Background technique [0002] At present, most GaN-based epitaxy is mainly grown on sapphire substrates. Due to the poor conductivity of sapphire, ordinary GaN-based light-emitting devices adopt a lateral structure, that is, the two electrodes are on the same side of the device, and the current flows laterally in the N-GaN layer. Flowing at unequal distances, there is current blockage and heat generation; in addition, the thermal conductivity of the sapphire substrate is low, thus limiting the luminous power and efficiency of GaN-based devices. Removing the sapphire substrate and making the light emitting device into a vertical structure can effectively solve the problems of heat dissipation, light output and antistatic. [0003] For vertical light-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 林雪娇陈文欣吴瑞玲洪灵愿潘群峰吴志强
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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