Method for reworking metal layer

A metal layer and heavy industry technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as unsatisfactory results, metal surface erosion, chip scrapping, etc., to achieve the effect of improving the final yield

CN101783292AInactive Publication Date: 2010-07-21SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2010-07-21
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a method for reworking a metal layer, which is applied in the field of integrated circuit manufacture. The method comprises the following steps: carrying out chemical mechanical lapping treatment on the metal layer, and removing a waveform structure and partial metal from the surface of the metal layer to form a globally planarized metal layer; depositing a passivation layer on the metal layer; and carrying out chemical mechanical lapping treatment on the structure, and removing the passivation layer and partial metal to form a planarized metal layer. The method for reworking the metal layer can greatly reduce surface defect caused by a normal chemical mechanical lapping process, such as the defects of metal, chemical, grinding fluid residue, microparticle residue and the like, even metal surface corrosion and crater defect, can remarkably improve the defect after the chemical mechanical lapping process, and increase the rate of good products.
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Description

technical field

[0001] The invention relates to the field of semiconductor product manufacturing, and in particular to a rework method applied in a chemical mechanical grinding process. Background technique

[0002] The first time chemical mechanical polishing (CMP) was used in an interconnect process was in the planarization process of tungsten plug (WPlug) for Al interconnects. However, as the size of the device decreases and the structure becomes more and more complex, the disadvantages of aluminum wires become more and more obvious, including the increase of response delay (characterized by RC). Because copper has good electrical conductivity and excellent electromigration properties, copper interconnects have gradually replaced aluminum interconnects, and copper chemical mechanical polishing (CuCMP) has gradually attracted the attention of the industry. Generally, the copper damascene structure includes a semiconductor substrate, a dielectric layer is deposited on the ...

Examples

Embodiment Construction

[0030] In order to better understand the technical content of the present invention, specific embodiments are given and described as follows in conjunction with the accompanying drawings.

[0031] The invention proposes a metal layer rework method, which can greatly reduce metal residue defects, increase wafer output and reduce wafer scrapping.

[0032] Please refer to figure 2 , figure 2 Shown is a flow chart of a metal layer reworking method in a preferred embodiment of the present invention. from figure 2 It can be seen that the present invention proposes a metal layer reworking method, which includes the following steps:

[0033] Step S10: performing chemical mechanical grinding on the metal layer, removing the corrugated structure and part of the metal on the surface of the metal layer to form a globally planarized metal layer;

[0034] Step S20: depositing a passivation layer on the metal layer;

[0035] Step S30: performing a chemical mechanical polishing proces...