Plasma treatment device with diffused dissociation

Abstract

The invention relates to a plasma treatment device with a diffused dissociation areas, which is used for reacting inductive coupling plasmas for generating an introducing gas with a substrate. The plasma treatment device is characterized by comprising a vacuum treatment chamber, air inlet passages, first coils, first diffused dissociation areas and second coils, wherein the air inlet passages are arranged above top plates of the vacuum treatment chamber and are communicated and connected with the vacuum treatment chamber; the first coils are arranged on the air inlet passages; the first diffused dissociation areas are arranged inside the air inlet passages which are provided with the inductive coupling plasmas for generating the introducing gas; and the second coils are arranged on the top plates of the treatment chamber, since the first coils and the second coils are arranged, gas molecules of the plasma are subjected to electronic bombardment for two times in the first diffused dissociation areas and the second diffused dissociation areas in sequence and then fully dissociated; in addition, the vertical through air inlet pipeline is widened and lengthened, the bottom of the vertical through air inlet pipeline is set into an inverse funnel or a horn shape and the vertical through air inlet pipeline corresponds to the substrate, so that the plasma dissociated by the bombardment can be quickly introduced to the surface of the substrate; and the density uniformity of the plasma on the surface of the substrate can be improved to shorten the time of treating reaction.

Description

technical field [0001] The invention relates to a plasma processing device, in particular to a plasma processing device with a diffusion dissociation area. Background technique [0002] At present, in the manufacturing process of semiconductor devices, etc., the commonly used inductively coupled plasma (ICP) processing device is used to generate the inductively coupled plasma of the introduced gas to react with the surface of the semiconductor device, and realize the processing technology such as etching of the semiconductor device. . [0003] See figure 1 As shown, in the existing inductively coupled plasma processing device, the reaction gas is introduced from the gas inlet channel 200 provided on the upper part of the vacuum processing chamber 100 . The coil 300 arranged outside the top plate 110 of the vacuum processing chamber 100 generates an alternating induced magnetic field after passing through the alternating current, so that the diffusion and dissociation of th...

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Problems solved by technology

[0007] Although in this plasma processing device, the reaction gas is bombarded by high-speed electrons in the plasma generated by the alternating magnetic fields of the first coil 310 and the second coil 320 in sequence, which increases the density of free radicals, but due to the The entrance is very narrow, and the reaction gas and the inductively coupled plasma generated in the auxiliary chamber 600 cannot quickly enter the intake channel 200 and will settle at the bottom of the auxiliary chamber 600

Moreover, during the process of being introduced into the processing chamber through the inlet channel 200, many high-speed electrons, free radicals, etc. escape from the plasma and revolve with the direction of the induced electric field, collide with the narrow inlet channel 200 and adhere to it, thus consuming a large amount of energy. energy

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