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Resistive random access memory used in flexible circuits and production method thereof

A resistive variable memory and variable technology, which is applied in the manufacture of circuits, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve the problems of complex process and limited etching conditions, and achieve the goal of simple process, low cost and avoiding high temperature Effect

Inactive Publication Date: 2010-07-28
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method is complicated in process and limited by the etching conditions, so it encounters great challenges in the process of realizing ultra-high-density resistive memory arrays

Method used

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  • Resistive random access memory used in flexible circuits and production method thereof
  • Resistive random access memory used in flexible circuits and production method thereof
  • Resistive random access memory used in flexible circuits and production method thereof

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Embodiment Construction

[0026] An exemplary embodiment of the present invention will be described in detail below with reference to the accompanying drawings. In the drawings, the thicknesses of layers and regions are enlarged or reduced for convenience of description, and the shown sizes do not represent actual sizes. Although these figures do not fully reflect the actual size of the device, they still completely reflect the mutual positions between the regions and the constituent structures, especially the upper-lower and adjacent relationships between the constituent structures. The referenced figures are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated in the figures but are to include resulting shapes, such as manufacturing-induced deviations. For example, the curves obtained by etching are usually curved or rounded, but in the embodiment of the pr...

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Abstract

The invention, which belongs to the technical field of nonvolatile memories, discloses a resistive random access memory used in flexible circuits and a production method thereof. The invention utilizes contact printing to form two layers of high-density metal nanowires arranged perpendicular to one another, the metal nanowires are used as the electrodes of the resistive random access memory, and thereby an ultrahigh-density resistive random access memory array can be formed; meanwhile, the invention utilizes polymer material to form a p-n junction structure and a storage unit in the resistive random access memory, so that high temperature is avoided, and therefore the resistive random access memory can be integrated in a flexible circuit. The invention has the advantages of simple implementation technique, low cost and the like and does not need high-temperature annealing, and moreover, the invention is applicable to printed circuits.

Description

technical field [0001] The invention belongs to the technical field of non-volatile memory, and in particular relates to a semiconductor memory and a preparation method thereof, in particular to a resistive variable memory which can be used in a flexible circuit and a preparation method thereof. Background technique [0002] With the continuous development of electronic products, non-volatile memory plays an increasingly important role in the semiconductor industry. Its biggest advantage is that the stored data can still be kept for a long time without external power supply. At present, the non-volatile memory on the market is mainly based on flash memory. In recent years, ferroelectric memory (FeRAM), phase change memory (PRAM) and resistive memory (RRAM) have been extensively studied. Among these memories, resistive memory has the advantages of simple preparation, high storage density, low operating voltage, fast read and write speed, long retention time, non-destructive ...

Claims

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Application Information

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IPC IPC(8): H01L27/28H01L23/532H01L21/822H01L21/84H01L21/768
Inventor 刘晗顾晶晶王鹏飞张卫
Owner FUDAN UNIV
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