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Device for reducing projection super-resolution imaging and photoetching method

A technology for super-resolution imaging and imaging devices, which is applied to the originals for opto-mechanical processing, microlithography exposure equipment, optics, etc., can solve the problems of high cost, complex projection system, and difficult processing of nano-pattern masks. To achieve the effect of reducing the difficulty of processing

Active Publication Date: 2012-08-08
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is: in view of the difficulty in processing nano-pattern masks in the existing near-field lithography technology, and the problems of complex light source systems and high-cost projection systems in 193nm lithography technology and extreme ultraviolet lithography technology, provide A super-resolution imaging lithography device that realizes nanoscale lithography resolution, adopts a traditional mercury lamp light source, and has a magnification relationship between the lithography pattern and the mask pattern

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  • Device for reducing projection super-resolution imaging and photoetching method
  • Device for reducing projection super-resolution imaging and photoetching method
  • Device for reducing projection super-resolution imaging and photoetching method

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Embodiment 1

[0027] Embodiment 1, a typical embodiment of the present invention, is to use a super-resolution imaging device to produce periodic lines with a period of 100nm and a line width of 50nm, and the exposure wavelength is mercury lamp i-line with a wavelength of 365nm.

[0028] The structure of the reduced projection imaging device is:

[0029] (1) if figure 1 As shown, the quartz substrate is used as a chromium film, and the chromium film has four adjacent light-transmitting line patterns with a period of 200nm and a line width of 100nm; the super-resolution imaging device is above the chromium film pattern. The circle radius of the device object plane is 1000nm, and the circle radius of the image plane is 500nm.

[0030] (2) if figure 1 As shown, the device structure is a multi-layer Ag and SiO2 film structure with alternating appearance and specific curved surface shape. The dielectric constants of Ag and SiO2 at a wavelength of 365nm are -2.4+0.2488i and 2.25, respectively,...

Embodiment 2

[0034] Embodiment 2, a typical embodiment of the present invention, uses a reduced projection imaging device and a traditional projection lithography system to produce periodic lines with a period of 100 nm and a line width of 50 nm, and the exposure wavelength is 365 nm.

[0035] The structure of the reduced projection imaging device is:

[0036] (1) Quartz is used as the substrate, on which is a super-resolution imaging device. The circle radius of the device object plane is 1000nm, and the circle radius of the image plane is 500nm. Such as figure 1 As shown, the device structure is a multi-layer Ag and SiO2 film structure with alternating appearance and specific curved surface shape. The dielectric constants of Ag and SiO2 at a wavelength of 365nm are -2.4+0.2488i and 2.25, respectively, where i is a pure imaginary number. The upper and lower outermost film surfaces are planes parallel to the substrate surface, and the distance between the two planes is H=360nm. The tot...

Embodiment 3

[0039] Embodiment 3: A typical embodiment of the present invention uses an array super-resolution imaging device to produce periodic lines with a period of 100 nm and a line width of 50 nm, and the exposure wavelength is mercury lamp i line with a wavelength of 365 nm.

[0040] The structure of the array reduction projection imaging device is:

[0041] (1) if Figure 5 As shown, the quartz is used as the substrate, and the quartz substrate is a chromium film. There are two groups of four adjacent light-transmitting line patterns with a period of 200nm and a line width of 100nm on the chromium film; Identify imaging devices. The circle radius of the device object plane is 1000nm, the circle radius of the image plane is 500nm, and the distance between the centers of the two devices is 2500nm.

[0042] (2) if Figure 5 As shown, each super-resolution imaging device structure is a multi-layer Ag and SiO2 thin film structure with alternating appearance and specific curved surfac...

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Abstract

The invention relates to a device for reducing projection super-resolution imaging and a photoetching method. The device is structurally characterized by a plurality of layers of alternately superposed metal and dielectric films, and the interface of the films is a specially designed curved surface. At the outermost layer of the film structure, masking information is imaged and transmitted to thesurface of the outermost layer of the other side with a certain reducing rate, and photoetching glue is coated outside the surface, therefore, reducing projection super-resolution imaging photoetching is realized. Or a masking pattern is projected and imaged on the object plane of the super-resolution imaging device through a projection optical system, and is imaged and transmitted to the surfaceof the outermost layer of the other side of the device with a certain reducing rate, and photoetching glue is coated outside the surface, therefore, reducing projection super-resolution imaging photoetching is realized.

Description

technical field [0001] The invention belongs to the technical field of optical photolithography processing, and relates to a device and a photolithography method for reducing projection super-resolution imaging. technical background [0002] In order to meet the continuous pursuit of smaller line width of integrated circuits, various new nanofabrication technologies have been continuously explored and researched. Traditional lithography technology obtains higher processing resolution by shortening the light source wavelength to a large extent, such as 193nm immersion lithography technology and extreme ultraviolet lithography technology, but the problems brought about are that the light source system and projection optical system are extremely complex and the cost High, poor compatibility with traditional lithography technology. [0003] Near-field lithography is a simple, low-cost, and efficient super-resolution lithography technology that uses traditional lithography mercu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F1/26
Inventor 罗先刚王长涛冯沁刘凯鹏潘丽邢卉刘尧刘玲
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI