Microwave ECR plasma-aid magnetron sputtering deposition device

Abstract

The invention belongs to the film technology and the application field, and particularly relates to a microwave ECR plasma-aid magnetron sputtering deposition device. The device comprises a magnetron sputtering area, an ECR plasma bombardment area, a substrate, an ECR plasma discharge chamber, a columnar chamber and an annular disc, wherein the sputtering area and the plasma bombardment area are positioned at two ends of an included angle of a vacuum chamber; and the annular disc is welded on the columnar chamber. The device can overcome the defects of low sputtering deposition rate and lower aided bombardment effect during sputtering aid deposition of double ion beams by combining high-activity microwave plasma and magnetron sputtering technology, can control deposition and plasma irradiation respectively, and can prepare high-quality films. Compared with the traditional method, the surface of a titanium film prepared under the aid of ECR is flat, compact and smooth. Meanwhile, the cost of the device also can be lowered.

Description

technical field [0001] The invention belongs to the field of thin film technology and application. Specifically relates to a microwave ECR plasma assisted magnetron sputtering deposition device Background technique [0002] The prior art discloses that ion beam assisted deposition is ion bombardment with a certain energy applied during the film growth process, which is accompanied by various physical phenomena such as shallow ion implantation, deposited atom migration and enhanced diffusion, and surface structure reconstruction, which can be varied to varying degrees. Change the structure and properties of the growing film and improve the quality of the film. Dual ion beam sputtering assisted deposition is an important technology commonly used at present, but it has low sputtering rate, high cost and other disadvantages. [0003] Magnetron sputtering coating is one of the important methods of physical vapor deposition (PVD). This method has the advantages of low substrate ...

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Problems solved by technology

[0005] However, the above method still has the following defects: the sputtering deposition rate is low during the dual ion beam sputtering assisted deposition, the auxiliary bombardment effect is relatively low, it is difficult to control, the film quality is not good, and the device cost is high, etc.

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