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Methods for attachment and devices produced using the methods

A technology for devices and supplies, applied in the field of attaching and using the devices produced, can solve the problems of damage to the die, poor device performance, limited life, etc.

Active Publication Date: 2010-08-11
FRY S METALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such high temperatures can damage the sensitive die, resulting in poor device performance or limited lifetime

Method used

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  • Methods for attachment and devices produced using the methods
  • Methods for attachment and devices produced using the methods
  • Methods for attachment and devices produced using the methods

Examples

Experimental program
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Effect test

Embodiment 1

[0051] Nanosilver pastes containing capped silver particles were prepared as described in US Patent Application Serial No. 11 / 462,089. Briefly, the composition of the silver paste was 80 wt.% nano silver powder with cetylamine capping agent in an amount ranging from 0 to 15 wt.%. Butyl carbitol was used as solvent (19.5 wt.% in the slip) and the surfactant BYK163 (0.5 wt.% in the slip) was also present. The composition was first mixed for 1 minute at 2500 rpm in a high-speed mixer SpeedMixer DAC 150FVZ-K and then ground in a 3-roller mill from EXAKT. The resulting material is used to wet and bond solid surfaces at temperatures of 200-300°C during the sintering process.

[0052] Experiments done using nanosilver powders with different amounts of cetylamine capping agent showed that nanomaterials containing no or minimal amount of capping agent did not adhere to silicon or any other material. It also cannot be sintered into a dense structure without applying considerable exter...

Embodiment 2

[0055] Prepare the slurry, which has the following ingredients: 70wt.% nano-silver powder (based on the weight of the blocked nano-silver powder with 2wt.% HDA capping), 15wt.% butyl carbitol, 2wt.% toluene, 0.75wt. % dispersant Dysperbyk 163 and 0.5 wt.% wetting agent Sylquest A1100.

[0056] The paste was stencil printed onto a 25 mm x 25 mm alumina direct bonded copper (DBC) substrate from Curamic Electronics. The stencil thickness is 150 microns and the opening is 20 x 20 mm. A 15 x 15 mm silicon die with sputtered nickel / gold metallization was placed on the surface of the silver stamp. The assembly was processed according to the following conditions: drying at 50° C. for 5 minutes, then drying at 140° C. for 30 minutes, and finally sintering at 300° C. and a pressure of 5 MPa for 2 minutes.

[0057] The formed joints were examined with X-rays (see image 3 , X-ray photographs of the die attached to the copper heat sink) and SEM observations with cross-sections (see Fig...

Embodiment 3

[0060] Nanogold slurries containing capped gold particles can be prepared as described in US Patent Application Serial No. 11 / 462,089. The slurry may include gold particles capped with about 1-2% by weight capping agent. The capping agent may be cetylamine, dodecanethiol, or other amine- or thiol-based capping agents. Nano gold paste may be used to attach the die (or other electronic components) to the substrate.

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PUM

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Abstract

Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300 DEG C or less to attach the die to the substrate. Devices produced using the methods are also described.

Description

[0001] related application [0002] This application claims priority and the benefit of U.S. Patent Provisional Application No. 60 / 950,797, filed July 19, 2007, and U.S. Patent Application No. 12 / 175,375, filed July 17, 2008, which are hereby incorporated by reference The entire disclosure of each application is incorporated herein. field of invention [0003] Certain embodiments disclosed herein generally relate to methods of attaching electronic components to substrates. More specifically, certain embodiments are directed to methods of attaching die using temperatures less than or equal to 300°C and devices fabricated using such methods. Background technique [0004] In attaching the die to the substrate, contacts or electrical bonds are used between the die and the substrate. In preparing the joints, high temperatures in excess of 300°C may be used. Such high temperatures can damage the sensitive die, resulting in poor device performance or limited lifetime. Contents...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/52B22F1/102
CPCH01L2224/29344H01L2224/29369H01L2224/29347H01L24/83H01L24/29H05K13/0465H01L2224/32225H01L2924/0105H01L2924/01047H01L2924/0132H01L2924/01046H01L2924/01078H01L2924/01006H01L2224/8384H01L2924/01079H01L2224/83801H01L2924/14H01L2224/2936H01L2224/29339H01L2924/10253H01L2224/83192H01L2924/0103H01L2224/29355H01L2924/01082H01L2924/01013H01L2924/0104H01L2924/01003H01L2924/01011H01L2924/014H01L2224/29101H01L2224/29111H01L2924/01029H01L24/32H01L2924/01019H01L2924/01077H01L2924/01033H01L2224/29364H01L2924/0102H01L2924/1461H01L2924/203Y10T29/4913Y10T428/24893Y10T29/49155Y10T29/49133H01L23/373H01L2224/83907H01L2224/45144H01L2224/0381H01L2224/83438H01L24/27H01L2224/8321H01L2924/3512H01L2924/12041H01L2224/83075H01L24/45H01L2224/2745H01L2224/45139H01L2224/83931H01L2224/2949H01L2224/8584H01L2224/27312H01L2224/2731H01L2224/8393H01L2224/83203H01L2224/48227H01L2224/83204H01L2224/2732H01L24/03H01L2224/27452H01L24/48H01L2224/29294H01L24/85H01L2224/27416H01L2224/83211H01L2924/00014B22F1/102H01L2224/83048H01L2924/00H01L2924/0002H01L2924/00012H01L2924/01014H01L2224/45015H01L2924/207
Inventor M·鲍瑞赫达N·德赛A·利福顿O·卡萨列夫M·T·玛克兹B·思恩赫
Owner FRY S METALS INC