Helicon wave plasma enhanced chemical vapor deposition unit

A plasma and enhanced chemical technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of helical wave plasma mode jumping and other problems, achieve low cost, simple circuit, prevent mode jumping effect of the phenomenon

Inactive Publication Date: 2010-08-18
HEBEI UNIVERSITY
View PDF0 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the helicon wave plasma generators in the prior art are all connected to an external RF power supply and antenna to realize the coupling of the radio frequency electromagnetic field and the excited helicon wave pl

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Helicon wave plasma enhanced chemical vapor deposition unit
  • Helicon wave plasma enhanced chemical vapor deposition unit
  • Helicon wave plasma enhanced chemical vapor deposition unit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] figure 1 As shown, the present invention is a self-excited helicon-wave plasma enhanced chemical vapor deposition device, which includes a high-voltage power supply 13 for exciting helicon-wave plasma, a self-excited oscillating circuit 10 and an antenna 4, a vacuum system 11, An insulating dielectric tube 5 used as a helicon wave plasma generating chamber and a high vacuum chamber 1 connected thereto as a plasma-enhanced chemical vapor reaction chamber. A coil 2 is arranged outside the insulating dielectric tube 5 to generate an axial magnetic field to meet the conditions for helical wave transmission, and an auxiliary coil 3 for generating a confinement magnetic field is arranged outside the high vacuum cavity 1, and the insulating dielectric tube 5 and the high vacuum cavity 1 are respectively An air inlet 8 and an air inlet control device 9 for feeding reaction gas are provided, and an annular nozzle 7 for feeding reaction gas and a heater 6 for raising the temperat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a helicon wave plasma enhanced chemical vapor deposition unit, belonging to the technical field of plasma processing units, in order to achieve the stability and effective feed-in of radio-frequency power and effectively prevent the mode of the helicon wave plasma from hopping. The technical scheme of the invention is as follows that: the helicon wave plasma enhanced chemical vapor deposition unit comprises an external high-voltage power supply, an antenna for exciting the helicon wave plasma, an insulating dielectric tube, a high-vacuum cavity, a coil and an auxiliary coil, wherein the insulating dielectric tube is provided with an air inlet and an inlet air controlling device, and the high-vacuum cavity is provided with a ring-shaped nozzle and a heater; a self-excited radio-frequency oscillating circuit is connected between the external high-voltage power supply and the antenna for exciting the helicon wave plasma. By coupling the radio-frequency electromagnetic field with the helicon wave plasma in a self-excited oscillation manner, the invention can effectively prevent the mode of the helicon wave plasma from hopping, make the generated helicon wave plasma more stable and exploit new development potential for the application of the helicon wave plasma; and the invention further has the advantages of simple circuits, convenient adjustment and low construction cost.

Description

technical field [0001] The invention relates to a helicon wave plasma-enhanced chemical vapor deposition device for preparing films with special performance requirements such as light, electricity and magnetism, and belongs to the technical field of plasma processing equipment. Background technique [0002] The generation of low-pressure plasma is generally realized by gas discharge forms such as DC, AC, radio frequency, and microwave. Radio frequency plasma gas discharge can adopt capacitive coupling and inductive coupling, and has a lower discharge voltage and lower working pressure, which is easy to realize Plasma density, temperature control and other characteristics have been widely used in the fields of semiconductor material synthesis, etching and processing. Low-voltage radio frequency plasma chemical vapor deposition technology uses plasma to realize ionization, decomposition and excitation of chemical reaction gases. The activation of chemical reactions enables the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C16/513
Inventor 于威路万兵傅广生刘丽辉王保柱
Owner HEBEI UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap