High-brightness light emitting diode chip
A light-emitting diode and high-brightness technology, which is applied in the direction of electrical components, electric solid-state devices, circuits, etc., can solve problems affecting the light output of the actuating film 12 and increase production costs, and achieve the effect of improving internal quantum efficiency and improving luminous brightness
Inactive Publication Date: 2012-04-04
ACEPLUX OPTOTECH
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0009] Such an approach can indeed effectively improve the internal quantum efficiency, thereby increasing the overall luminous brightness of the component. However, adding a barrier layer 15 with an image will add at least three more manufacturing steps to the manufacturing process, and Increase the production cost, and at the same time, the existence of the barrier layer 15 will also affect the light output of the actuating film 12, which leads to another problem that needs to be solved
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0030] Below in conjunction with accompanying drawing and embodiment the present invention is described in detail:
[0031] refer to Figure 4 , Figure 5 , a first preferred embodiment of the high-brightness light-emitting diode chip 2 of the present invention comprises a base material 21, a layer of action film 22 connected on the base material 21, a layer of electric current arranged on the action film 22 The diffusion layer 24, and a group of electrode units 25 including a first electrode 251 and a second electrode 252 for providing electric energy.
[0032] The substrate 21 is made of a material that is easy for epitaxial growth of gallium nitride-based semiconductor materials, such as sapphire.
[0033] The layer of action film 22 is usually selected from gallium nitride-based semiconductor materials, and is epitaxially formed from the substrate 21 upwards, has a bottom surface 225 connected to the substrate 21, and a top surface opposite to the bottom surface 225 224...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a high-brightness light emitting diode chip which comprises a substrate, an actuating film arranged on the substrate, a transparent current spreading layer arranged on the actuating film and an electrode unit for providing electric energy for the actuating film. Particularly, the top surface of the connection part of the actuating film with the current spreading layer comprises a high-energy action area acted by using high-energy particles and an electron runner area, wherein the electron runner area is not acted by the high-energy particles, and the resistance value of the electron runner area is relatively smaller than that of the high-energy action area, thus when the electrode unit is used for providing electric power, after current is guided by the current spreading layer to transversely and uniformly spread, the current flows downwards from the electron runner area to pass through the actuating film so as to ensure that the actuating film generates photons. Therefore, the current can pass through the actuating film in proportion with a state pattern corresponding to the electron runner area to improve the internal quantum efficiency of an assembly soas to further improve the whole lighting brightness of the assembly.
Description
technical field [0001] The present invention relates to a solid-state light-emitting component, in particular to a light-emitting diode chip (LightEmitting Diode Chip, LED Chip). Background technique [0002] refer to figure 1 The light emitting diode chip 1 comprises a base material 11, an operating film 12 connected on the base material 11, a current spreading layer 13 arranged on the operating film 12, and a set of devices for providing electric energy. Electrode unit 14. [0003] The substrate 11 is made of gallium nitride-based semiconductor material, such as sapphire, which is easy for epitaxial growth. [0004] This layer of action film 12 is usually selected from gallium nitride-based semiconductor materials, and is epitaxially formed from the substrate upwards, and has n-type and p-type first and second cladding layers 121, 122 ( n-type cladding layer, p-type cladding layer), and an active layer 123 (active layer) formed between the first and second cladding laye...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L27/15
Inventor 罗信明
Owner ACEPLUX OPTOTECH