Co-doped nanometer zinc oxide powder body and preparation method thereof

Abstract

The invention discloses a co-doped nanometer zinc oxide powder body and a preparation method thereof. The co-coped elements include a first metal element and a second metal element, wherein the first metal element is titanium, and the second metal element is aluminum, gallium, indium or tin; by total amount of substance, the sum of the first metal element, the second metal element and zinc in zinc oxide is 100 parts, wherein the sum of the first metal element and the second metal element accounts for 0.005-30 parts, and the scope of the part ratio of the first metal element and the second metal element is 1:100 to 100:1. Compared with the prior art, the method has accurately controllable reaction conditions, and the applied device is simple, has low cost, can control pollution conveniently, and is suitable for large-scale industrial production; and the doping uniformity of the obtained co-doped zinc oxide powder body is high, the powder body particles are uniform and in approximate ball shape, and have higher sintering activity, and the single phase property of the nanometer powder body is realized on the premise of high content of doped elements.

Description

technical field [0001] The invention belongs to the field of inorganic nanometer materials, in particular to co-doped nanometer zinc oxide powder and a preparation method. Background technique [0002] Transparent Conductive Oxide (TCO) is a wide bandgap semiconductor material with high free carrier concentration, and its free carriers come from material defects or external doping. CdO was the first TCO material invented, followed by SnO 2 and In 2 o 3 The research work of transparent conductive film based on transparent conductive film is technically mature and enters the market, and gradually becomes the mainstream TCO material and is widely used. Since the 1980s, research on zinc oxide (ZnO)-based TCO thin films has gradually emerged. The mainstream TCO material in the market is Indium Tin Oxide (ITO). However, because indium in ITO is a rare metal with limited reserves, and because the market demand for TCO materials has risen sharply, ZnO-based TCO materials have be...

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Problems solved by technology

The preparation process of this method is relatively simple, but there are also some shortcomings: first, it is difficult to uniformly mix a small amount of doped powder into the zinc oxide powder by ball milling, especially difficult to achieve uniform mixing at the nanometer level; secondly, in the ball milling It is easy to introduce other impurities in the process, reduce the purity of the target material, and even affect the quality of the target material; thirdly, most of the powder materials used are in the order of microns, and their sintering activity is low, requiring a high temperature of more than 1300 ° C for sintering, while At this temperature, the dopant reacts with zinc oxide to form a non-conductive segregation phase (such as the zinc aluminate phase in aluminum-doped zinc oxide), which leads to the inhomogeneity of the target conductivity, thereby affecting the sputtering process The stability of the medium glow, which in turn affects the quality of the film

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