Schottky junction single-sided electrode crystalline silicon solar cell and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- 江苏华创光电科技有限公司
- Publication Date
- 2010-08-25
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to the field of crystalline silicon solar cells, in particular to a Schottky junction single-sided electrode crystalline silicon solar cell and a preparation method thereof. Background technique
[0002] Solar energy, as a clean energy without any pollution, and the possibility of solar power as one of the main sources of power supply, have increasingly attracted people's attention. The key to solving this technology lies in the reduction of solar cell production costs and the improvement of conversion efficiency. For the mainstream crystalline silicon solar cells, since the front surface electrodes account for 20% of the surface area, the light-receiving area of the solar cell is reduced, thereby reducing its conversion efficiency.
[0003] Relevant technicians in the photovoltaic industry have made a lot of technological innovations and improvements on the basis of the traditional structure in order to improve the conversion ...