Schottky junction single-sided electrode crystalline silicon solar cell and preparation method thereof

A solar cell and Schottky junction technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of reducing the light-receiving area of ​​solar cells, reducing conversion efficiency, etc., achieving good light trapping effect, improving conversion efficiency, and increasing effective effect of length
CN101814540AInactive Publication Date: 2010-08-25江苏华创光电科技有限公司

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
江苏华创光电科技有限公司
Publication Date
2010-08-25
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a Schottky junction single-sided electrode crystalline silicon solar cell. In the cell, the backlight face of an N-type substrate is provided with a negative electrode which forms a Schottky junction together with the N-type substrate and a positive electrode which is matched with the negative electrode in shape, wherein the positive electrode and the N-type substrate are in ohmic contact; and a clearance is reserved between the negative electrode and the positive electrode. The invention also discloses a preparation method, which comprises: texturing the N-type substrate, and plating a light receiving surface with a passive layer and a reflective layer; forming the aluminum negative electrode on the backlight face of the N-type substrate by screen printing, wherein the aluminum negative electrode is shaped like a grid or comb; irradiating the aluminum negative electrode with strong laser to allow aluminum to permeate into a chip to form the Schottky junction; forming the metal positive electrode on the backlight face of the N-type substrate, which is crossed with the aluminum negative electrode and has the same shape as the aluminum negative electrode, by screen printing to form the positive electrode of the cell; and sintering the substrate to make the metal positive electrode in ohmic contact with the backlight face of the N-type substrate. The front face of the cell is not blocked and therefore can receive 10 to 20 percent of sunlight.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the field of crystalline silicon solar cells, in particular to a Schottky junction single-sided electrode crystalline silicon solar cell and a preparation method thereof. Background technique

[0002] Solar energy, as a clean energy without any pollution, and the possibility of solar power as one of the main sources of power supply, have increasingly attracted people's attention. The key to solving this technology lies in the reduction of solar cell production costs and the improvement of conversion efficiency. For the mainstream crystalline silicon solar cells, since the front surface electrodes account for 20% of the surface area, the light-receiving area of ​​the solar cell is reduced, thereby reducing its conversion efficiency.

[0003] Relevant technicians in the photovoltaic industry have made a lot of technological innovations and improvements on the basis of the traditional structure in order to improve the conversion ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More