Method for growing n-type transparent conducting ZnO crystal thin film by F doping

A transparent conductive, n-type technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., to achieve the effect of good repeatability and stability, good photoelectric performance

Inactive Publication Date: 2010-09-15
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But so far no F-doped n-type transparent conductive

Method used

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  • Method for growing n-type transparent conducting ZnO crystal thin film by F doping
  • Method for growing n-type transparent conducting ZnO crystal thin film by F doping
  • Method for growing n-type transparent conducting ZnO crystal thin film by F doping

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] 1) get the zinc oxide that purity is 99.99% and the zinc fluoride powder that purity is 99.99%, F molar content is 2%, ZnO and ZnF 2 The mixed powder is poured into an agate ball cup, placed on a ball mill for ball milling, and the time of ball milling is 24 hours. There are two purposes of ball milling: the first is to combine ZnO and ZnF 2 The powder is mixed evenly to ensure the uniformity of the prepared target; secondly, to mix ZnO and ZnF 2 The powder is refined to facilitate the subsequent molding and sintering of the mixed powder.

[0020] After ball milling, the powder was pressed into discs with a thickness of 3 mm and a diameter of 50 mm. Then, it was sintered at 1060° C. for 3 hours to obtain a target.

[0021] 2) Using glass as the substrate, clean the substrate surface and put it into the growth chamber of the pulsed laser deposition device. The vacuum degree of the back of the growth chamber is pumped to 10 -4 Pa, and then heat the substrate so that t...

Embodiment 2

[0024] 1) get the zinc oxide that purity is 99.99% and the zinc fluoride powder that purity is 99.99%, F molar content is 3%, ZnO and ZnF 2 The mixed powder is poured into an agate ball cup, placed on a ball mill for ball milling, and the time of ball milling is 24 hours. There are two purposes of ball milling: the first is to combine ZnO and ZnF 2 The powder is mixed evenly to ensure the uniformity of the prepared target; secondly, to mix ZnO and ZnF 2 The powder is refined to facilitate the subsequent molding and sintering of the mixed powder.

[0025] After ball milling, the powder was pressed into discs with a thickness of 3 mm and a diameter of 50 mm. Then, it was sintered at 1060° C. for 3 hours to obtain a target.

[0026] 2) Using glass as the substrate, clean the substrate surface and put it into the growth chamber of the pulsed laser deposition device. The vacuum degree of the back of the growth chamber is pumped to 10 -4 Pa, and then heat the substrate, so that ...

Embodiment 3

[0029] 1) get zinc oxide with a purity of 99.99% and zinc fluoride powder with a purity of 99.99%, the molar content of F is 1%, and ZnO and ZnF 2 The mixed powder is poured into an agate ball cup, placed on a ball mill for ball milling, and the time of ball milling is 24 hours. There are two purposes of ball milling: the first is to combine ZnO and ZnF 2 The powder is mixed evenly to ensure the uniformity of the prepared target; secondly, to mix ZnO and ZnF 2 The powder is refined to facilitate the subsequent molding and sintering of the mixed powder.

[0030] After ball milling, the powder was pressed into discs with a thickness of 3 mm and a diameter of 50 mm. Then, it was sintered at 800° C. for 3 hours to obtain a target.

[0031] 2) Using glass as the substrate, clean the substrate surface and put it into the growth chamber of the pulsed laser deposition device. The vacuum degree of the back of the growth chamber is pumped to 10 -4 Pa, then heat the substrate so that...

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Abstract

The invention discloses a method for growing an n-type transparent conducting ZnO crystal thin film by F doping, which adopts a pulse laser deposition method. A target material is a sintering ceramic target moulded by pressing pure zinc oxide and pure zinc fluoride power subjected to ball-milling and mixing, wherein the molar content of zinc fluoride is 1-3 percent; and then the n-type transparent conducting ZnO crystal thin film grows on a substrate in a growth chamber of a pulse laser deposition device by adopting pure O2 as a growing atmosphere and controlling O2 pressure of 0.05-0.5Pa, the laser frequency of 3-5Hz and the growth temperature of 30-500 DEG C. The method can realize real-time doping, and the doping concentration is controlled by adjusting the growth temperature and the molar content of F in the target material. The n-type ZnO crystal thin film prepared by the method of the invention has favorable optoelectronic performance, repeatability and stability.

Description

technical field [0001] The invention relates to a growth method of n-type transparent conductive ZnO crystal thin film, especially a method for growing n-type transparent conductive ZnO crystal thin film by F doping. Background technique [0002] Transparent conductive oxide (TCO) thin film is an important photoelectric material, because of its electrical conductivity close to that of metal, high transmittance in the visible light range, high reflectivity to infrared rays and its semiconductor characteristics, it is used in transparent electrodes of solar cells. , flat-panel liquid crystal displays, light-emitting diodes, thermal mirrors, energy-saving glass windows for buildings, and gas sensors have been widely used in many fields. At present, the TCO films that have been commercially applied are mainly In 2 o 3 :Sn(ITO) and SnO 2 : F (FTO) two types. Although the performance of the ITO thin film is good, the cost is relatively high because it contains the noble metal ...

Claims

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Application Information

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IPC IPC(8): C30B29/16C30B23/02
Inventor 朱丽萍曹铃叶志镇
Owner ZHEJIANG UNIV
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