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Plasma body cleaning device

A cleaning device and plasma technology, which is applied in the direction of cleaning methods and appliances, chemical instruments and methods, etc., can solve the problems of low plasma density, narrow working pressure range, and difficult technology development, so as to avoid electrode pollution and facilitate Control and protection, better cleaning effect

Inactive Publication Date: 2011-10-05
浙江尧瑶科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since plasma cleaning technology involves the research of plasma physics, plasma chemistry and material gas-solid phase interface characteristics, it needs to integrate various technologies such as chemical industry, materials and electronic machinery, so it is difficult to develop the technology
On the other hand, the corresponding existing plasma cleaning equipment also has some deficiencies, such as the capacitively coupled plasma cleaning device, although it can produce plasma with a larger diameter and the manufacturing process is relatively mature, but the plasma produced The density is not high, the working pressure range is narrow, and there is electrode pollution, which limits its application range to a certain extent

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0029] Such as Figure 1 to Figure 5As shown, a plasma cleaning device includes a main device 1 and a peripheral device 2. The peripheral device 2 is mainly composed of a gas supply device 21, a vacuum device 22 and a control device 23. The control device 23 includes a water circuit unit 24 and a gas circuit unit 25. And circuit unit 26, main body equipment 1 is mainly made up of microwave system 11 and reaction device 12, and microwave system 11 comprises microwave chamber 13, is arranged on the microwave source 14 in microwave chamber 13 and the microwave control circuit (Fig. not shown), the reaction device 12 includes a quartz cover 15 arranged in the microwave chamber 13, a reaction chamber base 16 arranged in the microwave chamber 13 and below the quartz cover 15, and surrounded by the quartz cover 15 and the reaction chamber base 16. The reaction chamber 17 formed by the formed space, the microwave control circuit is connected with the circuit unit 26 through the main e...

Embodiment 2

[0039] Such as Figure 1 to Figure 3 and Image 6 As shown, the structure of this embodiment is basically the same as that of Embodiment 1, the only difference is that in this embodiment the reaction chamber base 16 is a turntable reaction chamber base, as Image 6As shown, the reaction chamber base 16 is provided with a motor placement groove 51 that runs through the bottom of the microwave chamber cavity 131. The motor placement groove 51 communicates with the reaction chamber 17, and the motor placement groove 51 is provided with a motor 52. When placing the motor 52, the motor shaft 53 of the motor 52 needs to be vertically upward, and the bottom of the motor placement groove 51 is provided with a lead through hole 54 for leading out the power cord of the motor 52, and the power cord of the motor 52 passes through the lead wire The through hole 54 is connected to the external motor power supply, the opening end of the motor placement groove 51 is provided with a metal baf...

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Abstract

The invention discloses a plasma body cleaning device, which mainly consists of a microwave system and a reaction device, wherein the microwave system comprises a microwave chamber, a microwave source and a microwave control circuit, the microwave source can be regulated and controlled through the microwave control circuit, and the regulation and the control on the density of the plasma body can be realized. The cleaning device effectively avoids the electrode pollution by adopting a microwave excitation mode, and simultaneously enlarges the pressure intensity work range. Because the microwave technology is mature, the microwave leakage can be easily controlled and protected, the cleaning device has good safety performance. The work pressure intensity can be controlled through regulating and controlling the flow speed of the cleaning reaction gas and the gas pumping speed of a vacuum device, the power of the microwave source can be controlled through the microwave control circuit, andthe bombarding force on the surface of cleaning samples by the plasma body and the concentration of the plasma body can be effectively regulated. Thereby, the cleaning and the surface modification indifferent modes can be carried out according to the cleaning samples in different material types.

Description

technical field [0001] The invention relates to a cleaning device, in particular to a plasma cleaning device. Background technique [0002] Surface cleaning technology plays a very important role in the processing of optical devices and microelectronic components. At present, the widely used physical and chemical cleaning methods can be roughly divided into two types from the perspective of operation mode: wet cleaning and dry cleaning. Wet cleaning mainly relies on physical and chemical (solvent) effects, such as the adsorption, soaking, dissolution, and dispersion of chemical active agents, supplemented by physical methods such as ultrasonic waves, spraying, rotation, boiling, steam, and shaking to remove dirt on the surface of objects. stains. In the wet cleaning process, subsequent drying and wastewater treatment processes are required, and the cost of labor protection and environmental pollution control is relatively high. Dry cleaning mainly includes plasma cleaning...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B08B7/00
Inventor 周骏林豪仰明阳颜飞彪
Owner 浙江尧瑶科技有限公司
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