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Method for sedimentating silicon nitride thin film by using 13.56 MHz radio frequency power source

A technology of silicon nitride thin film and radio frequency power source, which is applied in the process of producing decorative surface effects, gaseous chemical plating, decorative art, etc., can solve the problems of high cost, complex parameters, difficult control, etc., and achieve the degree of compactness High, low film stress, excellent corrosion resistance

Inactive Publication Date: 2012-03-28
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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  • Application Information

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Problems solved by technology

However, this method requires the equipment to have two sets of radio frequency sources, and the cost is relatively high
Moreover, in many cases, the cantilever beam structure is composed of silicon nitride film and other materials, and the magnitude of the stress needs to be fine-tuned. The method of using two sets of radio frequency sources has complex parameters and is not easy to control.

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  • Method for sedimentating silicon nitride thin film by using 13.56 MHz radio frequency power source
  • Method for sedimentating silicon nitride thin film by using 13.56 MHz radio frequency power source

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Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0028] Such as figure 1 as shown, figure 1 It is a flow chart of a method for depositing a low-stress silicon nitride film using a 13.56MHz radio frequency power source provided by the present invention, and the method includes the following steps:

[0029] Step 1: Wash and preheat the sample.

[0030] In this step, the sample is cleaned and dried with nitrogen, placed in a plasma-enhanced chemical vapor deposition (PECVD) vacuum chamber, preheated for 5 minutes, and the sample is heated to 300°C and kept stable, while removing residual vapor. The samples are generally Si wafers or quartz wafers.

[0031] If it is a Si chip, use the standard RCA cleaning process. The specific cleaning steps are acetone ultrasonic clea...

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Abstract

The invention discloses a method for sedimentating a silicon nitride thin film by using a 13.56 MHz radio frequency power source. The method comprises the following steps of: firstly, cleaning and preheating a sample; secondly, sedimentating the silicon nitride thin film on the sample; and thirdly, annealing the sample sedimentated with the silicon nitride thin film. The invention only uses one power source, has simple and fast operation and strong universality, and can sedimetate the thin film more than 2 microns which has small stress and favorable corrosion resistance.

Description

technical field [0001] The invention relates to the technical field of semiconductor film preparation, in particular to a method for depositing a low-stress silicon nitride film by using a 13.56 MHz radio frequency power source. Background technique [0002] Micro Electro-Mechanical System (MEMS) is an emerging micro-manufacturing process, which mainly uses the mechanical properties of materials to make devices, such as sensors, micro-motors, and micro-switches. [0003] Silicon nitride film is a kind of dielectric film with excellent physical and chemical properties. It has the advantages of good insulation, stability, high resistance to oxidation and corrosion, and excellent masking ability of impurity ions and water vapor. It is often used as the final protective layer and surface passivation layer in semiconductor devices and integrated circuits. At the same time, silicon nitride film also has excellent mechanical and mechanical properties such as high hardness, high Yo...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/505B81C1/00
Inventor 李艳杨富华唐龙娟朱银芳
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI