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Manufacturing method of shallow trench isolation structure

A technology of isolation structure and manufacturing method, which is applied in the field of manufacturing shallow trench isolation structures, can solve problems such as repeated operations, achieve the effects of repairing damaged substrates, saving manufacturing costs, and ensuring product yields

Inactive Publication Date: 2010-10-20
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0005] In order to solve the above-mentioned problem that repeated operations may be caused by two anneals during the formation of shallow trench isolations, the present invention provides a method for forming shallow trench isolations that can avoid repeated operations and improve work efficiency.

Method used

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  • Manufacturing method of shallow trench isolation structure
  • Manufacturing method of shallow trench isolation structure
  • Manufacturing method of shallow trench isolation structure

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Embodiment Construction

[0022] The simple grinding liquid supply system of the present invention will be further described in detail below with reference to the drawings and specific embodiments.

[0023] First please refer to image 3 , image 3 It is a flow chart of the first embodiment of the present invention. It can be seen from the figure that the first embodiment includes the following steps: Step 11: forming the shallow trench on the semiconductor base material, the semiconductor base material is silicon, and the The general shape of the shallow trench can be referred to figure 1 , form shallow trench isolation, generally use silicon nitride as a hard mask, define a steep trench on the semiconductor substrate with anisotropy (anisotropy) etching method (dry etching); step 12: in the shallow trench The pad oxide layer is grown on the side wall and the bottom. The purpose of growing the pad oxide layer is to avoid the corner effect (Corner Effect). If the corner of the shallow trench is too s...

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Abstract

The invention provides a manufacturing method of a shallow trench isolation structure, which comprises the following steps: forming a shallow trench on a semiconductor substrate material; growing a gasket oxide layer on the side wall and at the bottom of the shallow trench; filling an insulated medium in the shallow trench; carrying out an annealing treatment; and grinding the surface of the insulated medium to smooth the surface of the shallow trench. In the invention, on the premise of ensuring the yield of the product, one annealing process is reduced, thereby saving the manufacturing cost, shortening the manufacturing time of the product, and enhancing the working efficiency.

Description

technical field [0001] The invention belongs to a semiconductor technology, in particular to a method for manufacturing a shallow trench isolation structure. Background technique [0002] Today, with the vigorous development of integrated circuits, the miniaturization and integration of components is an inevitable trend, and it is also an important topic for active development in all walks of life. As the size of components shrinks and the degree of integration increases gradually, the isolation structure between components must also be reduced, so the difficulty of component isolation technology also gradually increases. Component isolation is beneficial to the field oxide layer (Field Oxide) formed by Local Oxidation (LOCOS). Since the field oxide layer is limited by the bird's beak (Birds Beak) feature of its shape, it is difficult to reduce its size. . In view of this, other component isolation methods have been continuously developed, among which Shallow Trench Isolat...

Claims

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Application Information

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IPC IPC(8): H01L21/762H01L21/3105
Inventor 孙昌王艳生廖奇泊钱俊朱赛亚
Owner SEMICON MFG INT (SHANGHAI) CORP
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