Making method and system of semi-conductor device

Abstract

The invention provides making method and system of a semi-conductor device. The semi-conductor device comprises an HTO (High Temperature Oxidation) to improve the quality of the HTO and further the performance of the semi-conductor device. The method comprises the following steps of depositing an HTO film layer on a matrix; and treating the HTO film layer by annealing treatment, wherein reactants in the annealing treatment are hydrogen and oxygen or the hydrogen and nitrogen oxide.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device manufacturing method and system. Background technique [0002] High temperature oxide film (HTO, High Temperature Oxide) is widely used in various semiconductor integrated circuits such as logic products, dynamic random access memory (DRAM, Dynamic Random Access Memory) and flash memory (Flash). [0003] The traditional scheme usually adopts low-temperature chemical vapor deposition (LPCVD, Low Pressure Chemical Vapor Deposion) method to make HTO, and in this scheme, HTO is generally made of dichlorosilane (SiH 2 Cl 2 ) or silane (SiH4) and nitrogen oxide (N 2 O) react at a temperature of 700 to 800 degrees Celsius (°C) to obtain silicon dioxide (SiO 2 ) or silicon tetroxide (SiO 4 )Wait. However, due to the existence of problems such as insufficient reaction, there may be defects in the structure of the HTO produced by the above-mentioned tr...

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Problems solved by technology

However, due to the existence of problems such as insufficient reaction, there may be defects in the structure of the HTO produced by the above-mentioned traditional scheme, for example, for the silicon dioxide (SiO2) of the defect structure in HTO 2 ), one silicon atom may only be combined with one oxygen atom, so after HTO is obtained, it is generally necessary to process HTO to improve the structure of HTO and improve the quality of HTO

[0008] The inventors of the present application analyzed and concluded that: for the scheme provided by the patent-related document US6830974, since oxygen is difficult to decompose into oxygen atoms at about 900°C, the number of defect structures of HTO corrected by this scheme is limited, which limits the improvement of HTO quality

For the scheme provided by the patent-related document US20060211270, some of the decomposed oxygen atoms will be combined with N 2 O reacts to generate nitric oxide (NO). Therefore, although the number of oxygen atoms provided by this scheme has increased and the number of corrected defect structures has increased, the increase is still very limited, which still limits the improvement of HTO quality.

[0009] Since the quality of HTO seriously affects the performance of its semiconductor devices, the existing solutions limit the improvement of HTO quality, which also limits the improvement of semiconductor device performance.

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