Surface cleaning method on indium antimonide wafer after alkaline chemical mechanical polishing

Abstract

The invention discloses a surface cleaning method on indium antimonide wafer after alkaline chemical mechanical polishing. The invention aims at providing a method which can reduce downstream processing cost of indium antimonide wafer after alkaline chemical mechanical polishing, is simple and easy and can improve surface evenness and cleanliness of wafer. Ultrapure water with the resistance of more than 18Mohm is subject to stirring while surfactant and FA / O II chelating agent are added, stirring to be uniform is carried out, so as to obtain clean solution; the clean solution is adopted to rapidly carry out polishing cleaning on indium antimonide wafer after alkaline chemical mechanical polishing for at least 30s under the conditions of high flow of 1000-5000ml / min and low pressure of 0-0.0 atmospheric pressure; ultrapure water with the resistance of more than 18Mohm is adopted to dilute corrosion inhibitor, and high flow polishing cleaning is carried out on indium antimonide wafer after cleaning for at least 30s under the condition of zero pressure; and finally ultrapure water with the resistance of more than 18Mohm is adopted to wash the indium antimonide wafer after cleaning for at least 30s under the conditions of zero pressure and high flow.

Description

technical field [0001] The invention belongs to the cleaning technology of the wafer surface, and more specifically relates to a method for cleaning the surface of a semiconductor indium antimonide wafer after alkaline chemical mechanical polishing. Background technique [0002] The InSb staring infrared focal plane device with a response in the 1-5.5 μm band has the advantages of high sensitivity, mature technology, and good cost-effectiveness. At present, it occupies a dominant position in the field of military staring infrared. Examples include the US ballistic missile defense system and several critical conventional tactical weapons systems. InSb focal plane devices are widely used in guidance and thermal imaging devices. In terms of civil use, InSb thermal imaging technology is widely used in medical diagnosis, fire protection, rescue, industrial monitoring, forest protection and other fields. In air-to-air imaging guidance applications, the 64×64 element InSb starin...

AI Technical Summary

Problems solved by technology

[0003] At present, after mass polishing of indium antimonide materials, the surface is cleaned by washing with water. Due to the high temperature, high energy, and high surface tension of the wafer surface, although the polishing has stopped, the reaction on the wafer surface has a lagging process. Simple Rinsing with water cannot avoid the phenomenon of uneven distribution of polishing liquid, contamination of metal ions, etc., resulting in uneven corrosion on the surface of the cleaned indium antimonide material, increased roughness, and corrosion rings on the surface of the cleaned indium antimonide material. On an 8-inch chip, there are more than 1,000 particles with a particle size larger than 0.1 micron, which will increase the cost in subsequent processing and reduce the yield of the device

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