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Method and structure for improving photoelectric conversion efficiency of copper indium gallium selenium solar cell

A technology of photoelectric conversion efficiency and solar cell, which is applied in the field of solar power generation to achieve the effect of improving photoelectric conversion efficiency

Active Publication Date: 2010-12-15
ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the characteristics of light propagation, when sunlight enters the cell body, it can only pass through the light-absorbing layer along the refraction direction with a small inclination angle.

Method used

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  • Method and structure for improving photoelectric conversion efficiency of copper indium gallium selenium solar cell
  • Method and structure for improving photoelectric conversion efficiency of copper indium gallium selenium solar cell
  • Method and structure for improving photoelectric conversion efficiency of copper indium gallium selenium solar cell

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Embodiment Construction

[0018] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, but not as a basis for limiting the present invention.

[0019] Example. A method for improving the photoelectric conversion efficiency of a copper indium gallium selenide solar cell is characterized in that: a diffraction grating is formed between the transparent conductive thin film layer on the top of the copper indium gallium selenide solar cell and the light absorption to change the propagation direction of the incident photon to prolong the photon The effective propagation path in the light absorbing layer can effectively reduce the thickness of the absorbing layer and improve the photoelectric conversion efficiency of the copper indium gallium selenide thin film solar cell. The diffraction grating is a periodic modulation structure. The diffraction grating of the periodic modulation structure is a sinusoidal wave grating and a rectangular wave gra...

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Abstract

The invention discloses a method and a structure for improving the photoelectric conversion efficiency of a copper indium gallium selenium solar cell, which are characterized in that: a diffraction grating is formed between a transparent conductive film layer and a light absorption layer on the top of the copper indium gallium selenium solar cell to change the propagation direction of incident photons and prolong the effective propagation path of the photons in the light absorption layer, so that the thickness of the absorption layer is effectively reduced and the photoelectric conversion efficiency of the copper indium gallium selenium solar cell is improved. Through the method, the copper indium gallium selenium solar cell can improve the photoelectric conversion efficiency by over 25 percent maximally on the basis of the conventional copper indium gallium selenium solar cell and the thickness of the light absorption layer can be reduced to one quarter of that of the conventional cell.

Description

technical field [0001] The invention relates to a method and structure for improving the photoelectric conversion efficiency of a copper indium gallium selenium solar cell, belonging to the technical field of solar power generation. Background technique [0002] Copper indium gallium selenium thin film solar cells have the characteristics of low production cost, less pollution, no fading, and good weak light performance. It is called "a very promising new thin-film solar cell in the next era" internationally. In addition, the battery has a soft and uniform black appearance, which is an ideal choice for places with high requirements on appearance, such as glass curtain walls of large buildings, etc., and has a large market in modern high-rise buildings and other fields. Copper indium gallium selenide thin film solar cells usually include a substrate, a lower electrode layer (Mo), a light absorbing layer (CIGS), a buffer layer (ZnS or CdS), a transparent conductive film layer...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/042H01L31/0232H01L31/054
CPCY02E10/50Y02P70/50
Inventor 任宇航
Owner ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
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