pHEMT (pseudomorphic High Electron Mobility Transistor) radio frequency switch ESD (Electrostatic Discharge) protection device and radio frequency front end module including same

Abstract

The invention relates to a pHEMT (pseudomorphic High Electron Mobility Transistor) radio frequency switch ESD (Electrostatic Discharge) protection device and a radio frequency front end module including the same. The pHEMT radio frequency switch ESD protection device comprises third pHEMT switch devices (501, 504, 507, 510, 513) and a pHEMT ESD protection device, and the pHEMT ESD protection device is formed by connecting in series first pHEMT switch devices (502, 505, 508, 511) and second pHEMT switch devices (503, 506, 509, 512) in form of diodes. The pHEMT radio frequency switch ESD protection device is characterized in that the voltage of the third pHEMT switch devices (501, 504, 507, 510, 513) conducting a control signal is Vcc / 2+Vth, wherein the Vcc is a power source voltage, and the Vth is a threshold voltage between the third pHEMT switch devices (501, 504, 507, 510, 513) and a source electrode. The invention provides the ESD protection for a GaAspHEMT radio frequency switch and can reduce the parasitic capacitance for protecting diodes, thereby reducing the insertion loss of the radio frequency switch.

Description

Technical field [0001] The invention relates to the field of radio frequency, in particular to a pHEMT (Pseudo High Electron Mobility Transistor) radio frequency switch electrostatic protection device and a radio frequency front-end module containing the device. Background technique [0002] With the continuous development of modern wireless communication technology, there is a situation where multiple communication standards coexist, such as GSM, WCDMA, CDMA, TD-SCDMA and so on. In order to make the same wireless communication mobile phone terminal universal, it is required that the mobile phone terminal must support these different communication standards at the same time. Therefore, multiple radio frequency power amplifiers supporting different communication standards are required in the mobile phone terminal, and a radio frequency switch is used to switch the required radio frequency power amplifier to the transmission channel. At the same time, the radio frequency switch ca...

AI Technical Summary

Problems solved by technology

[0006] The electrostatic protection (ESD) measure of the RF switch chip is usually to connect a diode on the pin of the RF switch chip as an electrostatic leakage path. However, if an ESD protection diode is added to the pin of the RF switch chip, such as Figure 2b As shown, since the diodes 404 and 405 in the GaAs pHEMT process are depletion diodes, there is a large parasitic capacitance at zero bias, resulting in a large insertion loss of the radio frequency switch chip, which seriously reduces the performance of the radio frequency front end of the wireless communication

Therefore, ESD protection is usually not implemented in the current RF switch chip, which makes the reliability of the RF switch chip low.

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