Bottom source nmos triggered zener clamp for configuring an ultra-low voltage transient voltage suppressor (tvs)

Abstract

A low voltage transient voltage suppressing (TVS) device supported on a semiconductor substrate supporting an epitaxial layer thereon includes a bottom-source metal oxide semiconductor field effect transistor (BS-MOSFET) comprises a trench gate surrounded by a drain region encompassed in a body region disposed near a top surface of the semiconductor substrate wherein the drain region interfaces with the body region constituting a junction diode and the drain region encompassed in the body region on top of the epitaxial layer constituting a bipolar transistor with a top electrode disposed on the top surface of the semiconductor functioning as a drain / collector terminal and a bottom electrode disposed on a bottom surface of the semiconductor substrate functioning as a source / emitter electrode. The body regions further comprises a surface body contact region electrically connected to a body-to-source short-connection thus connecting the body region to the bottom electrode functioning as the source / emitter terminal. The gate may be shorted to the drain for configuring the BS-MOSFET transistor into a two terminal device with a gate-to-source voltage equal to a drain-to-source voltage. The drain / collector / cathode terminal disposed on top of the trench gate turns on the BS-MOSFET upon application of a threshold voltage of the BS-MOSFET thus triggering the bipolar transistor for clamping and suppressing a transient voltage substantially near a threshold voltage of the BS-MOSFET.

Description

technical field [0001] The invention generally relates to a circuit structure and a manufacturing method of a transient voltage suppressor. More precisely, the present invention relates to an improved circuit structure and a manufacturing method of an improved transient voltage suppressor, by establishing a bottom source N-type metal oxide silicon trigger in the transient voltage suppressor circuit Zener clamp structure for low voltage protection. Background technique [0002] Transient voltage suppressors are commonly used to protect integrated circuits from damage caused by sudden overvoltages on integrated circuits. Integrated circuits are designed within the normal range of voltages. However, some unexpected and uncontrollable high-voltage phenomena, such as electrostatic discharge, electrical fast transients, and secondary lightning, may have a sudden attack on the circuit. Transient voltage suppressors are used to protect circuits, and try to avoid possible damage t...

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Problems solved by technology

Also, the trigger circuit is divided into multiple stages, which may affect the overall response time of the transient voltage suppressor circuit

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