Etching method of semiconductor device

Abstract

The invention discloses an etching method of a semiconductor device, comprising the following steps of: coating a photoresistive glue layer on an insulation layer; exposing and developing so as to pattern the photoresistive glue layer; removing the photoresistive glue scumming at the bottom of the photoresistive glue opening by adopting rare gas argon (Ar) and oxygen (O2); and etching the insulation layer and removing photoresistive glue. The scumming problem brought by underdevelopment is solved by adopting the method, which makes the etching of the semiconductor device reach a target value and greatly improves the product qualification rate of the device.

Description

technical field [0001] The invention relates to a semiconductor device manufacturing process, in particular to an etching method for a semiconductor device. Background technique [0002] At present, in the back-end-of-line (BEOL) process of semiconductor devices, multiple layers of metal interconnection layers can be grown on semiconductor substrates according to different needs, and each layer of metal interconnection layers includes metal interconnection lines And the insulating layer, which requires the manufacture of trenches (trench) and connection holes for the above-mentioned insulating layer, and then deposit metal in the above-mentioned trenches and connection holes, the deposited metal is the metal interconnection line, and copper is generally selected as the metal interconnection wire material. The insulating layer includes an etch stop layer formed sequentially on the semiconductor substrate, such as a nitrogen-doped silicon carbide layer; a low dielectric const...

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Problems solved by technology

The negative impact caused by it is that the line width is out of control during lithography, and the problem of insufficient development will appear in some positions of the resist layer during development, and the topography problem is especially serious at the edge of the wafer, so the edge area is also more serious. Prone to Scumming problems caused by insufficient development

On the other hand, since the wafer needs to be cleaned before applying the photoresist in step 11, and the nozzle of the cleaning device is generally aimed at the middle area of ​​the wafer, of course the cleaning nozzle can also be set in other areas, so cleaning The final wafer will have unevenness between the area where the nozzle is aimed and other areas on the wafer, which also leads to the final Scumming problem

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