Method for improving performance of non-volatile memory

A non-volatile and memory technology, which is applied in the manufacture of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of low performance of SONOS, achieve the goal of improving charge capture efficiency, improving performance, and increasing deposition thickness Effect

Inactive Publication Date: 2013-03-13
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] Although SONOS can be obtained by using this method, due to the limitation of the process, the performance of the obtained SONOS is not high. The performance of SONOS includes the charge capture efficiency and the leakage current performance of SONOS.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving performance of non-volatile memory
  • Method for improving performance of non-volatile memory
  • Method for improving performance of non-volatile memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0048] For the oxygen-nitride-oxygen structure in non-volatile memory, the thickness of the silicon nitride layer determines the charge trapping efficiency of the non-volatile memory, and the silicon nitride oxide layer between the silicon nitride layer and the top oxide layer Determines the leakage current performance of the non-volatile memory. Therefore, in order to improve the performance of the nonvolatile memory, it is necessary to improve the oxynitride structure of the nonvolatile memory.

[0049]In the present invention, in order to improve the leakage current performance of the non-volatile memory, when silicon oxynitride is formed between the silicon nitride layer and the upper oxide layer, the in-situ steam generation method is used to gener...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for improving the performance of a non-volatile memory. In the process of producing an oxygen-nitrogen-oxygen structure in the non-volatile memory, the method comprises the following steps of: performing deposition on a wafer substrate to obtain a silicon dioxide surface layer; performing the deposition on the silicon dioxide surface layer to form a silicon nitride layer; and generating positive oxygen ions by an in-situ steam generating method, and after the generated positive oxygen ions is reacted with the silicon nitride layer to form silicon oxynitride, performing the deposition to obtain a high-temperature oxide layer. The method provided by the invention improves the performance of the non-volatile memory.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for improving the performance of a nonvolatile memory. Background technique [0002] With the development of semiconductor manufacturing technology, the application of non-volatile memory is more and more extensive. Non-volatile memories are gradually developing towards smaller and smaller volumes and larger and larger storage capacities. Although Electronically Erasable Read-Only Memory (EEPROM) is currently the mainstream of non-volatile memory, it cannot increase storage capacity in a limited volume due to its limitation in vertical scaling. [0003] Therefore, an embedded non-volatile memory (SONOS) has emerged. Due to the small size, low operating voltage, simple data access and radiation resistance of SONOS, the application of SONOS has become more and more popular. In SONOS, the oxide layer-nitride layer-oxide layer (ONO) three-layer structure is used ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8247H01L21/283H01L27/11568
Inventor 沈忆华宋化龙潘见王辛史运泽
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap