Integrated microstrip circulator and preparation method thereof
A circulator and microstrip technology, applied in the electronic field, can solve problems such as large dielectric loss
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Embodiment approach 1
[0028] (1) adopting DC magnetron sputtering method to prepare 2 micron thick gold (Au) film on GaAs substrate;
[0029] (2) Utilize radio frequency magnetron sputtering method to prepare 40 micron thick aluminum film on gold film, the purity of aluminum target is 99.9%;
[0030] (3) the aluminum film that step (2) obtains is put into the H of 70g / L 3 PO 4 In the solution, under the working voltage of 30V and the temperature of 18°C, the first anodic oxidation treatment was performed for 0.5 hours; then the sample after the first oxidation treatment was placed in 70g / L H 3 PO 4 The solution was soaked for 0.5 hours; finally the sample was put into 70g / L H 3 PO 4 In the solution, under the working voltage of 30V and the temperature of 18°C, the first anodic oxidation treatment was performed for 1 hour. Its surface morphology is observed with a scanning electron microscope, and its average pore size is 50nm.
[0031](4) Electroplating elemental magnetic metal cobalt in the ...
Embodiment approach 2
[0038] Except that the secondary anodizing voltage in the step (3) is 45V, other steps are the same as the first embodiment.
Embodiment approach 3
[0040] Except that the secondary anodic oxidation voltage in step (4) is 60V, other steps are the same as that of Embodiment 1.
[0041] Table 1 Implementation Effects
[0042] Example
[0043] In Table 1, the volume reduction ratio and weight reduction ratio of the samples prepared in the three embodiments are compared with the existing separate assembly type circulator.
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