Temperature control method of plasma chemical vapor deposition base

A technology of chemical vapor deposition and temperature control method, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of large temperature fluctuation, avoid temperature fluctuation, improve quality and improve stability Effect

Active Publication Date: 2011-01-19
IDEAL ENERGY (SHANGHAI) SUNFLOWER THIN FILM EQUIPMENT LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for controlling the temperature of a plasma chemical vapor deposition susceptor to solve the problem of large temperature fluctuations in the prior art

Method used

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  • Temperature control method of plasma chemical vapor deposition base
  • Temperature control method of plasma chemical vapor deposition base
  • Temperature control method of plasma chemical vapor deposition base

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Embodiment Construction

[0016] Please refer to figure 1 , figure 1 It is a schematic diagram of a plasma chemical vapor deposition device, including: a reaction chamber 101, a susceptor 102 at the bottom of the chamber, a temperature control device 104 for controlling the temperature of the susceptor, a gas spray device 107 for distributing gas, and a A plasma generator 106 that generates plasma. The susceptor 102 is used for placing the substrate (not shown) on which the film is to be deposited, and the susceptor has a resistance wire (not shown) for heating therein. The temperature control device 104 is electrically connected to the base 102 for controlling the temperature rise and fall of the base. The gas spraying device 107 is located at the top of the chamber and is opposite to the base 102 .

[0017] The temperature control device 104 of the above-mentioned plasma chemical vapor deposition apparatus is used to directly apply power to the resistance wire to heat the base 102. The base temper...

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Abstract

The invention relates to a temperature control method of a plasma chemical vapor deposition base, comprising the following steps of: providing an plasma chemical vapor deposition base with a resistance wire and a target temperature for heating the base; acquiring the total temperature difference of the target temperature and the original temperature according to the original temperature of the base and the target temperature of the base to be heated; deciding the number of temperature gradients to be set and the numerical value range of temperatures in each temperature gradient according to the total temperature difference; and heating the resistance wire according to the set temperature gradients to sequentially increase the temperature of the base according to the numerical value range of the temperatures in the temperature gradients and controlling the temperature rise parameter of the last temperature gradient so that the fluctuation range of the base temperature after the base temperature reaches the target temperature satisfies the process requirement. By adopting the temperature control method, the fluctuation range of the base temperature after reaching the target temperature is small. An amorphous silicon membrane or a microcrystalline film formed by the temperature control method provided by the invention has high quality.

Description

technical field [0001] The invention relates to a method for controlling the temperature of a plasma chemical vapor deposition base, in particular to a method for controlling the temperature of a base in a plasma chemical vapor deposition chamber used for manufacturing thin-film solar cells. Background technique [0002] Among many solar cell application technologies, thin-film solar cells are widely used in aviation, aerospace and people's daily life due to a series of advantages such as non-polluting, low energy consumption, low cost, and large-scale production. Common thin film solar cells include: amorphous silicon thin film solar cells, copper indium gallium selenide thin film cells and cadmium telluride thin film cells. In the Chinese invention patent documents with publication numbers 101027749 and 101226967, more methods for forming the above-mentioned solar thin film cells can be found. [0003] Taking the method of forming an amorphous silicon thin film solar cell...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/46C23C16/52
Inventor 张德义谢林
Owner IDEAL ENERGY (SHANGHAI) SUNFLOWER THIN FILM EQUIPMENT LTD
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