Giant dielectric-nonlinear low-voltage difunctional varistor ceramic material and preparation method thereof

A ceramic material and non-linear technology, which is applied in the field of giant dielectric varistors and non-linear varistor materials, can solve the problems of varistor characteristics that are not recorded, and achieve the effects of short cycle, simple process operation and low cost

Inactive Publication Date: 2012-12-19
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently, about Bi 0.5-x Na 0.5-x Ba 2x Cu 3 Ti 4 o 12 The characteristics of ceramics and their giant dielectric-nonlinear low-voltage varistors are not recorded in domestic and foreign literature

Method used

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  • Giant dielectric-nonlinear low-voltage difunctional varistor ceramic material and preparation method thereof
  • Giant dielectric-nonlinear low-voltage difunctional varistor ceramic material and preparation method thereof
  • Giant dielectric-nonlinear low-voltage difunctional varistor ceramic material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0019] Preparation of Bi by sol-gel method using citric acid as complexing agent 0.5-x Na 0.5-x Ba 2x Cu 3 Ti 4 O 12 (x=0) Ceramic. First, weigh 0.08mol of citric acid into a 100mL beaker 1, add 35mL of deionized water, dissolve under ultrasonic dispersion to form a transparent solution; then weigh 0.04mol of butyl titanate into a 100mL beaker 2, then Transfer the citric acid solution in 1 beaker to the titanium solution in 2 beakers; dissolve the titanium solution under constant stirring, then ultrasonically disperse for 30 min, and then add 5 mL of ethylene glycol to form a transparent solution. The molar ratio of butyl titanate and citric acid aqueous solution is 1:2. In the second step, 0.05mol of citric acid was weighed into a 500mL beaker, 20mL of deionized water was added, and dissolved under ultrasonic dispersion to form a transparent solution; then 0.03mol of copper nitrate, 0.005mol of sodium nitrate, 0.005 mol of bismuth nitrate was added to the above soluti...

Embodiment 2

[0022] Preparation of Bi by sol-gel method using citric acid as complexing agent 0.5-x Na 0.5-x Ba 2x Cu 3 Ti 4 O 12 (x=0.025) Ceramic. First, weigh 0.08mol of citric acid into a 100mL beaker 1, add 35mL of deionized water, dissolve under ultrasonic dispersion to form a transparent solution; then weigh 0.04mol of butyl titanate into a 100mL beaker 2, then Transfer the citric acid solution in 1 beaker to the titanium solution in 2 beakers; dissolve the titanium solution under constant stirring, then ultrasonically disperse for 30 min, and then add 5 mL of ethylene glycol to form a transparent solution. The molar ratio of butyl titanate and citric acid aqueous solution is 1:2. In the second step, 0.05mol of citric acid was weighed into a 500mL beaker, 20mL of deionized water was added, and dissolved under ultrasonic dispersion to form a transparent solution; then 0.03mol of copper nitrate, 0.00475mol of sodium nitrate, 0.00475 mol of bismuth nitrate and 0.0005 mol of bar...

Embodiment 3

[0025] Preparation of Bi by sol-gel method using citric acid as complexing agent 0.5-x Na 0.5-x Ba 2x Cu 3 Ti 4 O 12 (x=0.005) Ceramic. First, weigh 0.08mol of citric acid into a 100mL beaker 1, add 35mL of deionized water, dissolve under ultrasonic dispersion to form a transparent solution; then weigh 0.04mol of butyl titanate into a 100mL beaker 2, then Transfer the citric acid solution in 1 beaker to the titanium solution in 2 beakers; dissolve the titanium solution under constant stirring, then ultrasonically disperse for 30 min, and then add 5 mL of ethylene glycol to form a transparent solution. The molar ratio of butyl titanate and citric acid aqueous solution is 1:2. In the second step, 0.05mol of citric acid was weighed into a 500mL beaker, 20mL of deionized water was added, and dissolved under ultrasonic dispersion to form a transparent solution; then 0.03mol of copper nitrate, 0.0045mol of sodium nitrate, 0.0045 mol of bismuth nitrate and 0.001 mol of barium...

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Abstract

The invention relates to the field of materials of electronic information components, and discloses giant dielectric-nonlinear low-voltage varistor ceramic material and a preparation method thereof. The giant dielectric-nonlinear low-voltage varistor ceramic material of the invention is prepared by a sol-gel method in which a citric acid serves as a complexing agent, and has the molecular formula of Bi0.5-xNa0.5-xBa2xCu3Ti4O12, wherein x is more than 0 and less than or equal to 0.075. The ceramic material prepared by the method has a giant dielectric constant and nonlinear low-voltage varistor effect, is a multifunctional ceramic material with vast application prospect, and has dielectric properties and voltage-sensitive characteristics which are adjusted according to the ratio of Ba. The preparation method of the invention has the characteristics of simple process operation, short cycle, low cost, environmental friendliness, nontoxicity, no need of atmosphere reduction and the like.

Description

technical field [0001] The invention relates to the field of giant dielectric voltage-sensitive and nonlinear pressure-sensitive materials in electronic information components. Background technique [0002] Multifunctional dielectric materials are the key materials for the upgrading of microelectronics technology characterized by the miniaturization and high speed of electronic devices. Giant dielectric voltage-sensitive bifunctional ceramic materials refer to ceramic materials that have both a huge dielectric constant ( ) and nonlinear varistor effect (that is, nonlinear voltammetry characteristics, which means that the resistance of the material is sensitive to voltage, and the resistance of the material changes with the current within a certain voltage and current range). With the rapid development of the microelectronics industry, the integration of electronic devices is continuously improved, and electronic devices are developing towards integration, miniaturization ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/462C04B35/624
Inventor 袁松柳邱洋陈亮田召明
Owner HUAZHONG UNIV OF SCI & TECH
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