Method for forming Hf-based gate medium film on germanium substrate by atomic layer deposition at low temperature
A technology of atomic layer deposition and gate dielectric, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of deteriorating film performance, reduce leakage current density, reduce surface roughness, and reduce defects Effects of Charge and Interface State Density
Inactive Publication Date: 2013-03-27
NANJING UNIV
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These precursors contain elements such as C, H or Cl, which easily remain in the deposited film and deteriorate the film performance
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[0022] The present invention will be further described below in conjunction with specific embodiments.
[0023] 1. Preparation process of atomic layer deposition of Hf-based gate dielectric film on germanium substrate.
[0024] 1. Cleaning and passivation process of Ge surface
[0025] Substrate material: commercial single crystal germanium sheet, N or P type, orientation (100), resistivity 0.01-10Ω·cm.
[0026] Process flow: The germanium substrate is first ultrasonically cleaned in acetone and methanol for 2-10 minutes to remove the oil on the Ge surface, and then the germanium substrate is moved to a 5-20% hydrobromic acid aqueous solution (weight percentage, the same below), Clean at room temperature for 3-15 minutes, then dry the germanium substrate with high-purity nitrogen, put the dried germanium substrate in a 15-50% aqueous solution of ammonium sulfide, heat the ammonium sulfide to 60-80°C for passivation 10-20 minutes, finally rinse the treated germanium surface with deion...
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Abstract
The invention discloses a method for forming an Hf-based gate medium film on a germanium (Ge) substrate by atomic layer deposition at a low temperature. The method comprises the following steps of: placing a passivated substrate in an ALD reaction chamber at the temperature of between 140 and 170 DEG C; taking trimethyl aluminum Al(CH3)3 and hafnium nitrate Hf(NO3)4 as precursors; in an atomic layer deposition cycle period, first, introducing a metal source TMA pulse, then, introducing a cleaning pulse, next, introducing a metal source Hf(NO3)4 pulse, and finally, introducing the cleaning pulse; repeating the cycle period according to the thickness of the Hf-based gate medium film needing to be deposited; and obtaining the Hf-based gate medium film formed the Ge substrate by the atomic deposition at the low temperature. In the method, a gate medium oxide is deposited at the low temperature so as to effectively reduce a germanium oxide (GeOx) on a surface, prevents the diffusion of the Ge and the generation of the GeOx, and obviously improves electrical properties.
Description
Technical field [0001] The invention relates to an atomic layer deposition technology, in particular to a method for depositing a Hf-based gate dielectric film on a germanium substrate by using a low-temperature atomic layer deposition technology. Background technique [0002] At present, the research of high-k materials in the field of traditional silicon-based integrated circuits has made a lot of progress. Intel has used high-k materials (atomic layer deposited Hf-based Hf-based products) in mass-produced 45nm technology Penryn microprocessor products. The combination of oxide film) and metal gate was introduced into the integrated circuit chip and achieved very good performance. But it still faces a series of severe physical and technical challenges. One of the main problems is the introduction of high-k gate dielectric and metal gate materials. While reducing the high power consumption of small-scale complementary CMOS devices, it also brings about the deterioration of the ...
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IPC IPC(8): C23C16/455C23C16/02C23C16/06
Inventor 李学飞李爱东章闻奇刘晓杰付盈盈吴迪
Owner NANJING UNIV