Thin film transistor and method for producing thin film transistor
A technology of thin film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as stripping, and achieve the effect of improving productivity
Active Publication Date: 2011-02-09
ULVAC INC
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Problems solved by technology
[0004] However, even though a wiring film mainly composed of copper has high adhesion to silicon in experiments, when a TFT is manufactured using a copper wiring film, peeling may occur, so investigation of the cause and countermeasures are sought.
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Embodiment
[0084] Argon was used as the sputtering gas, oxygen was used as the oxidizing gas, and the copper alloy target 111 was sputtered to form a 50 nm adhesion layer 51 on the glass substrate, and then the pure copper target 112 was sputtered with argon. A metal low-resistance layer 52 of 300 nm was formed on the adhesion layer 51 to obtain a metal wiring film with a two-layer structure. The substrate temperature is 100° C., the sputtering gas is Ar gas, and the sputtering pressure is 0.4 Pa.
[0085] The surface of the formed metal wiring film was exposed, and after being exposed to hydrogen plasma, a silicon nitride film was formed on the surface.
[0086] In the hydrogen plasma treatment, the hydrogen flow rate is 500 sccm, the pressure is 200 Pa, the substrate temperature is 250° C., the power is 300 W, and the time is 60 seconds.
[0087] In a CVD apparatus equipped with a substrate, SiH 4 : 20 sccm, NH 3 Gas 300sccm, N 2 Each gas was introduced at a rate of 500 sccm, and a...
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Provided is a metal wiring film which does not peel even when exposed to hydrogen plasma. A metal wiring film (20a) is composed of an adhesive layer (51) wherein an additive metal is added to copper, and a low-resistance metal layer (52) which is arranged on the adhesive layer (51) and composed of pure copper. The adhesive layer (51) contains a copper alloy which contains the additive metal composed of at least one kind of element selected from among Ti, Zr and Cr, and oxygen, and the adhesive layer is permitted to configure a source electrode and a drain electrode which adhere to a silicon layer. Copper is not deposited on an interface between the adhesive layer (51) and the silicon layer even when the adhesive layer is exposed to hydrogen plasma, and peeling is not generated between the adhesive layer (51) and the silicon layer. When the quantity of the additive metal is increased, the adhesive layer (51) cannot be etched by an etching solution to be used for etching the low-resistance metal layer (52). Therefore, the maximum adding quantity which permits etching to be performed is specified as the upper limit quantity.
Description
technical field [0001] The present invention relates to a transistor having an electrode film made of a copper alloy and a method for manufacturing the transistor. Background technique [0002] Conventionally, in an electronic circuit such as a TFT (Thin film transistor: thin film transistor), a metal wiring film is connected to a source region or a drain region of the TFT. [0003] In recent years, since TFTs and wiring films have been miniaturized, in order to obtain low-resistance wiring films, wiring films mainly composed of copper are used. [0004] However, even though a wiring film mainly composed of copper has high adhesion to silicon in experiments, when a TFT is manufactured using a copper wiring film, peeling may occur. Therefore, investigation of the cause and countermeasures is sought. [0005] Patent Document 1: Japanese Patent Laid-Open No. 2001-73131 [0006] Patent Document 2: Japanese Patent Application Laid-Open No. 11-54458 Contents of the invention ...
Claims
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IPC IPC(8): H01L21/336H01L21/285H01L29/786H01L21/3205H01L23/52
CPCH01L21/2855H01L21/76841H01L29/458C23C14/0057C23C14/185H01L23/53233H01L23/53238H01L27/124H01L2924/0002H01L2924/00H01L29/66765H01L29/78678
Inventor 高泽悟石桥晓中村久三增田忠
Owner ULVAC INC