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Quartz crucible and method for casting quasi-single crystal

A technology of quartz crucible and quasi-single crystal, which is applied in the field of quasi-single crystal casting and quasi-single crystal casting quartz crucible, can solve the problems of increasing the production cost of the casting method, and achieve the effect of improving quality and electrical performance

Inactive Publication Date: 2011-02-23
ALTUSVIA ENERGY TAICANG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the above casting quasi-single crystal technology has certain disadvantages
For BP Solar's Mono 2 For quasi-single crystal technology, the growth of quasi-single crystal needs the assistance of seed crystal, and the addition of seed crystal directly increases the production cost of the casting method; for dendrite casting quasi-single crystal technology, precise control of the initial stage of silicon crystal crystallization is very important, and a special casting furnace is required In order to control the growth of dendrites well, the previous results were all obtained in the laboratory, and there are still some problems in industrial production.

Method used

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Examples

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Effect test

Embodiment 1

[0033] A quartz crucible with a square shape and a horn-shaped pit at the bottom of the crucible; the thickness of the bottom of the crucible is 10cm; the diameter D of the large ring at the upper end is 100mm, the diameter of the small ring at the lower end is 1cm, the size of h' is 5cm, and the depth of the pit is 8cm , 36 uniformly arranged pits are made on the bottom surface; the surface of the quartz crucible is coated with a silicon nitride coating.

[0034] A method for casting a quasi-single crystal, the specific steps of the method are as follows:

[0035] (1) Use the quartz crucible described in this embodiment, and put 270kg of silicon ingot into the quartz crucible;

[0036] (2) Put the quartz crucible into the casting furnace, and the temperature in the furnace is 1450 degrees Celsius;

[0037] (3) The crystallization speed of the silicon melt in the pit in the initial stage is 0.8mm / min;

[0038] (4) Then complete the growth of the entire crystal at a speed of 1m...

Embodiment 2

[0041] A quartz crucible is square in shape, and the bottom of the crucible is set as attached Figure 4 The shape shown in the pit; the thickness of the bottom of the crucible is 15cm; the length D of the upper end is 156mm, the length d of the lower end is 30mm, the size of h' is 80mm, the depth h of the pit is 13cm, and 25 pits are evenly arranged on the bottom surface; The surface of the quartz crucible is coated with silicon nitride coating.

[0042] A method for casting a quasi-single crystal, the specific steps of the method are as follows:

[0043] (1) Adopt the quartz crucible described in this embodiment, and put 450kg silicon ingot into the quartz crucible;

[0044] (2) Put the quartz crucible into the casting furnace, and the temperature in the furnace is 1580 degrees Celsius;

[0045] (3) The crystallization speed of the silicon melt in the pit in the initial stage is 0.5mm / min;

[0046] (4) Then complete the growth of the entire crystal at a speed of 3mm / min; ...

Embodiment 3

[0049] A quartz crucible is square in shape, and the bottom of the crucible is set as attached Figure 5 The shape shown in the pit; the bottom thickness h of the crucible is 5cm; the short side length D of the upper quadrilateral is 75mm, and the long side length is equal to the crucible side length; the short side length d of the lower quadrilateral is 5mm, and the size h' is 25mm. The depth is 13cm, and 10 parallel and evenly arranged pits are made on the bottom surface; the surface of the quartz crucible is coated with a silicon nitride coating.

[0050] A method for casting a quasi-single crystal, the specific steps of the method are as follows:

[0051] (1) Adopt the quartz crucible described in this embodiment, and put 450kg silicon ingot into the quartz crucible;

[0052] (2) Put the quartz crucible into the casting furnace, and the temperature in the furnace is 1520 degrees Celsius;

[0053] (3) The crystallization speed of the silicon melt in the pit in the initial...

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Abstract

The invention discloses a quartz crucible. The bottom of the quartz crucible is provided with a pit which is spontaneously generated by inducing seed crystal. The invention also discloses a method for casting quasi-single crystal by using the quartz crucible. By using the quartz crucible of the invention, the quality of grown cast crystalline silicon is effectively improved so as to improve the electrical performance of a solar cell. By the method for casting the quasi-single crystal in the invention, the diameter of the obtained crystal grain is about 5 to 10cm, tests show that the dislocation density is about 10<3>cm<-2> which is far less than a number range of 10<4> to 10<5>cm<-2> of silicon crystal obtained by the conventional casting method under the same condition; and accordingly, the minority carrier lifetime value of a silicon slice obtained by the method of the invention is about 18us which is greater than the minority carrier lifetime value of 11us of the silicon slice prepared from the same raw material by the conventional casting method.

Description

technical field [0001] The invention relates to the photovoltaic industry, in particular to a quasi-single crystal casting quartz crucible and a quasi-single crystal casting method thereof. Background technique [0002] Judging from the current photovoltaic market, silicon solar cells occupy most of the market share. According to the different types of materials used, silicon solar cells can be divided into crystalline silicon solar cells and thin film silicon solar cells. Due to expensive equipment, complex process and low conversion efficiency, the market share of thin-film silicon solar cells is far smaller than that of crystalline silicon solar cells. According to market statistics, the share of crystalline silicon solar cells was 85% in 2009. about. In crystalline silicon solar cells, due to the relatively simple manufacturing process and relatively low manufacturing cost of polycrystalline silicon materials, since 2003, the market share of polycrystalline silicon has...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00
Inventor 李晓强邢国强林赛女
Owner ALTUSVIA ENERGY TAICANG
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