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Gold-coated polysilicon reactor system and method

A reactor system and reactor technology, applied in chemical instruments and methods, from chemically reactive gases, coatings, etc., to achieve the effects of reducing thermal stress, reducing the operating temperature of components, and reducing corrosion

Inactive Publication Date: 2011-02-23
GTAT CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the reaction chambers disclosed in U.S. Patent No. 4,938,815 are designed for large-scale growth of wafers surrounding heating tools configured to be inserted and removed between the reaction chambers and are not suitable for use with Heating and deposition of polysilicon on silicon rods or filaments

Method used

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  • Gold-coated polysilicon reactor system and method
  • Gold-coated polysilicon reactor system and method
  • Gold-coated polysilicon reactor system and method

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Embodiment Construction

[0028] Preferred embodiments of the present invention will be described below with reference to the accompanying drawings, wherein the same reference numerals denote the same or similar components.

[0029] The present invention provides a reaction chamber system, and related devices and methods for the system. The system preferably contains a chemical vapor deposition (CVD) reactor in which polysilicon or other materials can be deposited according to the Siemens method. Preferably, the system includes a reaction chamber in which an existing power source is used. The chamber is used to deposit polysilicon on thin rods or filaments, preferably made of silicon, which are heated by passing an electric current through the thin rods or filaments. A polysilicon deposit can accumulate substantially uniformly on the exposed surfaces of the filaments within the chamber, which can be substantially free of impurities. Alternatively, materials other than polysilicon may be deposited wit...

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Abstract

A reaction chamber system, and related devices and methods for use in the system, are provided in which reduced power consumption can be achieved by providing a thin layer of gold on one or more components inside a reaction chamber. The reaction chamber system can be used for chemical vapor deposition. The gold coating should be maintained to a thickness of at least about 0.1 microns, and more preferably about 0.5 to 3.0 microns, to provide a suitable emissivity inside the reaction chamber, and thus reduce heat losses.

Description

[0001] This application claims priority to US Provisional Application Serial No. 61 / 039,756, filed March 26, 2008, the disclosure of which is expressly incorporated herein by reference in its entirety. technical field [0002] The present invention is directed to systems and methods for increasing energy efficiency in chemical vapor deposition reactors. More particularly, the present invention relates to systems and methods for reducing power consumption in chemical vapor deposition chamber systems by coating the interior of the chamber with a thin layer of gold to reduce emissivity. Background technique [0003] In semiconductor processing and photovoltaic applications utilizing procedures such as chemical vapor deposition (CVD), materials may be heated in large furnaces or reaction chambers where high voltages are required to achieve melting and / or deposition of various chemicals. It is therefore desirable to provide improved systems and methods for reducing heat loss due ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/00
CPCC30B25/08C23C16/4404C01B33/035
Inventor 杰弗里·C·噶姆乍得·费罗丹·德斯罗西尔
Owner GTAT CORPORATION