mim capacitor and its manufacturing method

A manufacturing method and technology of capacitors, which are applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of large differences in molecular structure, poor connection force, peeling and scattering of upper plate metal 3, etc.
CN101989620BInactive Publication Date: 2011-11-30SEMICON MFG INT (SHANGHAI) CORP
0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2011-11-30
Estimated Expiration
Not applicable Β· inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to a manufacturing method of a MIM capacitor, comprising the following steps: preparing a substrate, the substrate has a top and outwardly protruding side portions; forming a lower plate metal on the top of the substrate; forming a dielectric layer on the top and side portions of the substrate, The dielectric layer covers the metal of the lower plate; a transition layer is formed on the dielectric layer, and the transition layer has the effect of enhancing the adhesion between the dielectric layer and the metal of the upper plate; the transition layer on the top of the substrate is removed by chemical mechanical planarization process, and the exposed The dielectric layer retains the transition layer on the side of the base; the upper plate metal is formed on the exposed dielectric layer and the transition layer. Due to the implementation of the above technical scheme, the connection between the metal on the upper plate and the dielectric layer is firm, the metal on the upper plate will not peel off, and the yield rate of the MIM capacitor can be improved; and, due to the adoption of a special process, the properties of the capacitor are not Affected.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to a metal-insulator-metal (metal-insulator-metal, hereinafter referred to as MIM) capacitor and a manufacturing method thereof. Background technique

[0002] Capacitive components are often used as electronic passive devices in integrated circuits such as radio frequency ICs and monolithic microwave ICs. Common capacitor structures include metal oxide semiconductor (MOS) capacitors, PN junction capacitors, and MIM capacitors. Among them, MIM capacitors provide better electrical characteristics than MOS capacitors and PN junction capacitors in some special applications. This is because MOS capacitors and PN junction capacitors are limited by their own structures, and the electrodes are prone to generate hole layers during operation. , causing its frequency characteristics to degrade. The MIM capacitor can provide better frequency and temperature-related characteristics. In addition, in semiconductor manufacturing, MIM c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More