Surface passivation method for Ge

A thin film and solution technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of degraded MOS device performance, high defect density, low dielectric constant, etc.
CN102005390AInactive Publication Date: 2011-04-06FUDAN UNIV
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
FUDAN UNIV
Publication Date
2011-04-06
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention belongs to the technical field of semiconductor manufacturing, and particularly discloses a surface passivation method for Ge. By adopting a thioacetamide (CH3CSNH2) solution to passivate a Ge sheet, the natural oxide on the surface of the Ge sheet can be removed, and an even and compact GeSx passivation layer can be generated to prevent the reoxidation of the surface of the Ge sheet and eliminate the Fermi level pinning. A layer of high-quality Al2O3 film is deposited on the passivated Ge sheet by adopting an atom layer deposition method to prevent the reoxidation of the surface of the Ge sheet, and therefore, a good Al2O3 / Ge interface can be obtained.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a substrate surface passivation process before the preparation of a semiconductor device, in particular to a germanium surface passivation method before the preparation of a germanium-based semiconductor device. Background technique

[0002] The development of integrated circuit chips basically follows Moore's Law (Moore Law), that is, the integration level of semiconductor chips doubles every 18 months. In recent years, with the continuous development of microelectronics technology, integrated circuit chips have become smaller and faster, and the improvement of the driving current of metal-oxide-semiconductor (MOS) devices has become more important. The drive current of a MOS device is related to the ratio of gate width to gate length and carrier mobility. Due to the short channel effect, it is difficult to increase the ratio of the gate width to...

Claims

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