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Method for manufacturing NOR flash memory with phosphorus and arsenic ion injection

An ion implantation and manufacturing method technology, applied in the field of flash memory manufacturing, can solve problems such as increasing the leakage current of the drain region junction

Active Publication Date: 2012-10-10
EON SILICON SOLUTION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the formation of the metal silicide layer will cause the loss of the drain junction, and the loss will increase the leakage current of the drain junction.

Method used

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  • Method for manufacturing NOR flash memory with phosphorus and arsenic ion injection
  • Method for manufacturing NOR flash memory with phosphorus and arsenic ion injection
  • Method for manufacturing NOR flash memory with phosphorus and arsenic ion injection

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Embodiment Construction

[0034] In order to fully understand the purpose, features and effects of the present invention, the present invention will be described in detail through the following specific embodiments and accompanying drawings, which will be described later. In these different drawings and embodiments, the same components will use the same symbols.

[0035] The manufacturing method of the NOR flash memory of the present invention is mainly to implant phosphorus and arsenic ions into a drain region of the memory component, and to reduce the defects of the memory component and improve the yield rate through the control of specific implantation energy and dosage. The embodiment of the present invention is an N-channel NOR type semiconductor storage structure, which has an N-type source / drain ion implantation region. Figure 1 to Figure 6 It is a cross-sectional view of a NOR flash memory according to an embodiment of the present invention during different process steps.

[0036] See first ...

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Abstract

The invention discloses a method for manufacturing an NOR flash memory with phosphorus and arsenic ion injection. The manufacture method is mainly characterized in that phosphorus and arsenic ions are simultaneously injected in a drain region of a transistor memory unit. By controlling specific injection energy and quantity, the defects of the memory assembly are reduced, and the production qualified rate is improved.

Description

technical field [0001] The present invention relates to a method of manufacturing flash memory, more particularly to a method of manufacturing NOR flash memory with phosphorus and arsenic ion implantation Background technique [0002] Flash memory is a kind of non-volatile (non-volatile) memory, that is, it can save information content even when there is no external power supply, which makes the device itself not need to waste power on data storage, and flash memory also has The characteristics of repeated reading and writing, small size, high capacity and portability make flash memory particularly suitable for use in portable devices. At present, the scope of NOR-type flash memory application, in addition to the motherboard on the personal computer will use NOR-type flash memory to store BIOS data, mobile phones, handheld devices will also use NOR-type flash memory to store system data, through its high-speed reading speed, meet the needs of handheld devices. The boot requ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8247H01L21/265
Inventor 吕升达
Owner EON SILICON SOLUTION