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Plasma generating apparatus and plasma processing apparatus

A plasma and generating device technology, which is applied in plasma, semiconductor/solid-state device manufacturing, gaseous chemical plating, etc., to achieve the effect of simple structure, easy manufacture, and easy maintenance and inspection

Active Publication Date: 2011-04-20
ELECTRO-MOTIVE DIESEL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case of the aforementioned antenna structure protruding into the vacuum container, there is a problem that it is not easy to efficiently apply a magnetic field to the plasma near the antenna.

Method used

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  • Plasma generating apparatus and plasma processing apparatus
  • Plasma generating apparatus and plasma processing apparatus
  • Plasma generating apparatus and plasma processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] while referring to figure 1 The plasma generator of Example 1 will be described in detail. The high-frequency antenna conductor 13 is a rectangular aluminum plate with a short side of about 60 mm x a long side of about 120 mm. The surface of the high-frequency antenna conductor 13 on the vacuum side is planar, and the surface on the air side is provided with a concave notch 23 . The magnetic field generator 18 is mounted in the notch 23 . The high-frequency antenna conductor 13 is thicker around the notch 23 than the notch 23, and a water channel 22 for circulating cooling water is provided in the thicker part of the conductor. In this embodiment, the thickness of the notch 23 is set to about 3 mm so that the magnetic field enters the vacuum side through the high-frequency antenna conductor 13 and the dielectric shield plate 17 . Of course, since the required magnetic flux density will be determined by the size of the magnet, the residual magnetic flux density and th...

Embodiment 2

[0060] Regarding the structure near the high-frequency antenna in the plasma generating device of Embodiment 2, image 3 Shows a schematic sectional view of the main parts. The configuration of the plasma generator of this embodiment is almost the same as that of the first embodiment except for the high-frequency antenna conductor 33 and the wiring for feeding power to the high-frequency antenna conductor 33 . The length of the long side of the high-frequency antenna conductor 33 is about twice that of the high-frequency antenna conductor 13 of Embodiment 1, and a protrusion 30 for feeding high-frequency power is provided in the center, and both ends are grounded. The high-frequency power supplies power to the protrusion 30 through the matching box, and the high-frequency current flows to the grounded edges.

[0061] According to this embodiment, it is possible to roughly double the plasma generation range without increasing the impedance of the antenna.

[0062] Also, for e...

Embodiment 3

[0064] About the structure near the high-frequency antenna in the plasma generating device of embodiment 3, it is shown in Figure 4 A schematic cross-sectional view of the main parts. The present embodiment is almost the same as the first embodiment except that a high-frequency antenna conductor 43 formed of an aluminum disk having a diameter of 180 mm (among them, the diameter of the plasma generation region is 130 mm) is used. However, the magnetic field generator provided in Embodiment 1 is not used in this embodiment. In addition, according to the shape of the high-frequency antenna conductor 43, the insulating barrier frame 44 is changed into a circular ring shape, the dielectric shielding plate 47 is changed into a disc shape, and the opening 49 is changed into a circle shape, thereby respectively differing from the embodiment. 1. A point (feed point) on the disc circumference of the high-frequency antenna conductor 43 is connected to a high-frequency power supply (fr...

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Abstract

A flat-board-like high frequency antenna conductor (13) is arranged on a flange, which also serves as a part of a vacuum container and has a rectangular opening section, so as to cover the opening section by sandwiching an insulating glass frame body surrounding the opening section. A high frequency power supply is connected to the high frequency antenna conductor at one end thereof along the long side, with a matching box therebetween, and the other end is grounded, then, power is supplied so that a high frequency current flows from the one end to the other end of the high frequency antenna conductor. Thus, impedance of the high frequency antenna conductor is reduced and high density plasma at a low electron temperature can be efficiently generated.

Description

technical field [0001] The invention relates to a device for generating plasma, and a plasma processing device for etching substrate surface or forming thin film by using generated plasma. Background technique [0002] Plasma processing devices such as plasma CVD devices, dry etching devices, and ashing devices are used in the manufacturing process of semiconductor devices, liquid crystal displays, and solar cells. In order to achieve the purpose of corresponding to large substrates, high-speed processing, fine processing, etc., these devices pursue high-density and high-uniform plasma generation in a wide range. Therefore, a general plasma generation technique uses a parallel plate method. The parallel plate method is to arrange two flat electrodes in parallel in the vacuum container, apply a high-frequency voltage to one electrode plate, and ground the other electrode or apply other high-frequency voltage to generate plasma between the two electrode plates. This method i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/46C23C16/507H01L21/3065
CPCH01J37/32183H01J37/3266H01J37/32091H01J37/3211H05H1/46H01J37/32174H01J37/321
Inventor 江部明宪安东靖典渡边正则
Owner ELECTRO-MOTIVE DIESEL
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