Method for preparing diamond/silicon carbide ceramic matrix composite material

A silicon carbide ceramic matrix and composite material technology, applied in the field of ceramic materials, can solve the problems of low equipment requirements, high equipment requirements and high cost, and achieve the effects of low equipment requirements, simple impregnation process and low-cost preparation

Inactive Publication Date: 2011-04-27
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a kind of preparation method of ceramic matrix composite material in order to overcome the problems existing in the existing method for preparing diamond/silicon c

Method used

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  • Method for preparing diamond/silicon carbide ceramic matrix composite material
  • Method for preparing diamond/silicon carbide ceramic matrix composite material
  • Method for preparing diamond/silicon carbide ceramic matrix composite material

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0016] Example 1

[0017] In terms of weight percentage, 9.7% of the adhesive, 28.3% of silicon carbide powder with a particle size of 10μm, and 62% of diamond particles with a particle size of 120μm were wet-mixed in n-hexane for 8 hours, dried, crushed, and sieved in a hydraulic press Upper press molding, pressing pressure 75MPa, pre-oxidation in air at 200℃ for 9h, sintering in nitrogen atmosphere at 1000℃ for 12h, and the density is 2.53g / cm 3 The porous matrix.

[0018] The porous substrate was vacuum immersed in the precursor impregnation solution, impregnation vacuum degree -0.1MPa, impregnation time 1h, impregnation solution mass concentration 40%, pre-oxidation in air at 200℃ for 9h, and sintered at 1000℃ in nitrogen atmosphere After 12h, after cooling in the furnace, vacuum impregnation, oxidation, sintering, and cooling are carried out under the same conditions. After 7 cycles, a dense diamond / silicon carbide ceramic matrix composite material is obtained.

Example Embodiment

[0019] Example 2

[0020] In terms of weight percentage, 7.5% of the binder, 21.5% of silicon carbide powder with a particle size of 20μm, 71% of diamond particles with a particle size of 140μm are wet-mixed in n-hexane for 10 hours, dried, crushed, sieved and then placed in a hydraulic press Upper press molding, pressing pressure 225MPa, pre-oxidation in air at 200℃ for 9h, sintering in nitrogen atmosphere at 1200℃ for 14h, the density is 2.61g / cm 3 The porous matrix.

[0021] The porous substrate was vacuum immersed in the precursor impregnation solution, impregnation vacuum degree -0.1MPa, impregnation time 1h, impregnation solution mass concentration 30%, pre-oxidized in air at 200℃ for 9h, and sintered in nitrogen atmosphere at 1200℃ After 14h, after cooling in the furnace, vacuum impregnation, oxidation, sintering, and cooling were performed under the same conditions. After 7 cycles, a dense diamond / silicon carbide ceramic matrix composite material was obtained.

Example Embodiment

[0022] Example 3

[0023] In terms of weight percentage, 7.5% of the binder, 44% of silicon carbide powder with a particle size of 10μm, and 48.5% of diamond particles with a particle size of 120μm are wet-mixed in n-hexane for 8 hours, dried, crushed, and sieved in a hydraulic press Upper press molding, pressing pressure 225MPa, pre-oxidation in air at 200℃ for 9h, sintering in nitrogen atmosphere at 1000℃ for 8h, to obtain density of 2.46g / cm 3 The porous matrix.

[0024] The porous substrate was vacuum immersed in the precursor impregnation solution, impregnation vacuum degree -0.1MPa, impregnation time 1h, impregnation solution mass concentration 40%, pre-oxidation in air at 200℃ for 9h, and sintered at 1000℃ in nitrogen atmosphere 8h, after cooling in the furnace, vacuum impregnation, oxidation, sintering, and cooling are performed under the same conditions. After 5 cycles, a dense diamond / silicon carbide ceramic matrix composite material is obtained.

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Abstract

The invention discloses a method for preparing a diamond/silicon carbide ceramic matrix composite material, and belongs to the field of ceramic materials. The diamond/silicon carbide ceramic matrix composite material is characterized by being prepared from the following raw materials in percentage by weight: 5 to 15 percent of adhesive, 15 to 45 percent of silicon carbide powder, and 40 to 80 percent of diamond particle. The method comprises the following steps of: wet-mixing the raw materials for 8 to 24 hours, performing die forming under the pressure of 75 to 250MPa to obtain a blank of the composite material, oxidizing the blank in the air at the temperature of 200DEG C for 6 to 10 hours, sintering under the protection of nitrogen at the temperature of between 800 and 1,200DEG C for 8 to 15 hours, and cooling together with a furnace; and performing vacuum impregnation, oxidation, sintering and cooling, and circulating for 3 to 7 times to obtain the compact diamond/silicon carbide ceramic matrix composite material, wherein the oxidation temperature is 200DEG C, the oxidation time is 6 to 10 hours, the sintering is performed at the temperature of between 800 and 1,200DEG C for 8 to 15 hours under the protection of nitrogen, and the product is cooled together with the furnace. The method has low equipment requirement, is low in cost and can prepare the complicated-shaped compact diamond/silicon carbide ceramic matrix composite material.

Description

technical field [0001] The invention belongs to the field of ceramic materials, in particular to a method for preparing a diamond / silicon carbide ceramic-based electronic packaging composite material. Background technique [0002] The rapid development of the electronics industry has made the electronics industry one of the most promising industries, and the development of the electronics industry has also led to the development of electronic packaging technology that is closely related to it. High power, miniaturization, light weight, high-density assembly, low cost, high performance and high reliability have become the development direction of integrated circuits. However, the continuous improvement of integration and power will inevitably lead to a great increase in the heat generation rate of integrated circuits. Extreme heat can lead to an increase in the operating temperature of devices and circuit boards, which directly affects the stability and life of electronic dev...

Claims

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Application Information

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IPC IPC(8): C04B38/00C04B35/52C04B35/622
Inventor 何新波杨振亮吴茂任淑彬曲选辉
Owner UNIV OF SCI & TECH BEIJING
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