35results about How to "Avoid subsequent processing" patented technology

The invention provides a detection structure suitable for detecting source and drain conduction. The detection structure is arranged on a substrate, and comprises at least one polygonal active area ring of which horizontal section is hollow; at least one polycrystalline silicon grid is arranged on each active area ring; and the polycrystalline silicon grid and the active area rings on two sides of the polycrystalline silicon grid form a metal oxide semiconductor (MOS) structure. The detection structure is suitable for detecting the voltage contrast of epitaxial metals by using an E-beam detection method; and by observing the brightness degree, whether source and drain conduction exists in the detection structure can be clearly displayed, and whether source and drain conduction exists on a wafer can be further judged. Because the problem is early discovered, unnecessary subsequent processing for waste products can be avoided.

The invention relates to the technical field of bearing machining, and discloses a bearing machining technology. The bearing machining technology comprises the steps that 1, a pipe is cut into a disc-shaped blank through bearing cutting equipment; 2, the blank is subjected to turning machining through a lathe; 3, quenching heat treatment and tempering heat treatment are conducted on the blank subjected to turning; 4, the diameters of the inner circle and the outer circle of a bearing are detected through a bearing automatic detector; 5, the end surface of the blank is ground through a circulartruncated cone surface grinder; 6, the peripheral surface of the blank is ground through a centerless grinder; 7, a roller bed of the bearing is machined through a roller bed grinder; and 8, the roller bed is subjected to finish machining through a precise channel superfinishing grinding machine. According to the bearing machining technology, size detection is conducted before the bearing blank is subjected to grinding machining, so that rejected parts are removed in advance, the situation that the rejected parts are polished in the later period is avoided, energy resources are saved, and themachining efficiency of finished products is improved.

The invention provides a method for preparing a diamond-silicon carbide electronic packaging material fast. The method is characterized in that according to weight percentage, 10-15 percent of adhesive, 5-20 percent of graphite, 20-40 percent of ganister sand and 30-60 percent of diamond are wet-mixed for 16-24h, then a composite material blank is obtained through forming under 100 to 200 DEG C and 10-50MPa pressure; the composite material blank is fired for 16-24h under 1,000 to 1,100 DEG C in the argon atmosphere, and a diamond / silicon / carbon polyporous matrix having a certain strength andporosity is obtained after cooling; the diamond / silicon / carbon polyporous matrix prepared is placed in a graphite crucible and then is embedded through liquidphase infiltration infiltrated material,and then the crucible is placed in a high vacuum fritting furnace for vacuum liquidphase infiltration for 0.5-1h, and the infiltration temperature is 1,450-1,550 DEG C, and the vacuum degree is -0.08to -0.01MPa; and the compact diamond-silicon carbide electronic packaging material can be obtained after cooling.

The present invention relates to the technical field of capacitor design and manufacture, adopts a linear circulating flow production method as a whole, and a set of first ribs (23), second ribs (24), The capacitor fixing fixture composed of the positioning groove (25) and the piezoelectric micro-movement piece (26), the vertical plate (11) on both sides of the chain (2) is respectively arranged with a capacitor feeding mechanism (4), a laser cutting mechanism (5), The ball welding mechanism (6), the insulating pad socketing mechanism (7), the electrode sheet feeding and welding mechanism (8) and the discharging mechanism respectively complete the feeding and fixing of the capacitor, cutting the lead wire, ball welding, covering the insulating pad, covering the electrode sheet and In the welding process, the present invention adopts all-electric drive and automatically tensions the high-rigidity chain to ensure the high precision and high speed of the system; the laser cutting method is used to cut the lead wire, which avoids the influence of deformation caused by mechanical cutting on the lead wire. processing.

The invention relates to the technical field of sealing detection devices, and in particular relates to a sealing safety detection device for a beverage packaging can. The device comprises a packagingcan conveyor belt. A number of stand columns which are placed at equal intervals are fixed on the packaging can conveyor belt. A packing can is turned upside down on each stand column. A number of detection box bodies with downward openings are fixedly connected with the bottom of a support plate. A sealing plug is arranged in each detection box body, and a through hole is arranged in the middleof the sealing plug. A second shunt is connected with an air extractor. A first shunt is connected with an air blower. A vacuum level sensor is connected with a signal processor. The signal processoris connected with a controller. A first switch valve, the air extractor, a power telescopic rod, the air blower and a second switch valve are connected with the controller. According to the invention,the device can effectively detect air leakage of the packaging can, and can carry out batch detection; subsequent processing of unqualified products can be effectively avoided; the work efficiency ofthe whole process is improved; and beverage waste is avoided.

The invention discloses an array substrate, a display panel and a cutting control method for the array substrate. The array substrate has a gap, and the array substrate includes a display area and a non-display area of ​​the gap, wherein the non-display area of ​​the gap surrounds the gap, and the display area surrounds the non-display area of ​​the gap; it also includes: conductive traces, the conductive traces are located in the non-display area of ​​the gap, and A conductive trace is arranged along the edge of the gap; the test board is electrically connected to the conductive trace through a connecting wire, wherein at least two test boards are electrically connected to the same conductive trace. The invention can realize the control of the cutting precision of the array substrate.

The invention relates to a wire harness threading device, which includes a frame body and a workbench. A winding column is rotatably connected to the surface of the workbench. A driving assembly is arranged on one side of the winding column. The first hollow wire tube and the second hollow wire tube are arranged on both sides of the casing, and a mounting hole is provided on the cover, and a hollow support tube is provided at the installation hole, and a shell is provided on the outer periphery of the hollow support tube, and a through hole is opened on the shell. hole, the second hollow wire tube, the through hole, the hollow support tube and the installation hole are arranged concentrically; The first air cylinder is connected on the handle portion of the knife. The wire harness threading equipment and its use method designed by the present invention realize the cutting of the wire harness, so that the wire harness protrudes out of the casing, which is convenient to use, and at the same time avoids the waste of the casing by secondary cutting of the casing, saves processing costs, and improves the production efficiency of the casing. Practical performance of wire harness through pipe equipment.

The invention discloses a method for preparing a diamond / silicon carbide ceramic matrix composite material, and belongs to the field of ceramic materials. The diamond / silicon carbide ceramic matrix composite material is characterized by being prepared from the following raw materials in percentage by weight: 5 to 15 percent of adhesive, 15 to 45 percent of silicon carbide powder, and 40 to 80 percent of diamond particle. The method comprises the following steps of: wet-mixing the raw materials for 8 to 24 hours, performing die forming under the pressure of 75 to 250MPa to obtain a blank of the composite material, oxidizing the blank in the air at the temperature of 200DEG C for 6 to 10 hours, sintering under the protection of nitrogen at the temperature of between 800 and 1,200DEG C for 8to 15 hours, and cooling together with a furnace; and performing vacuum impregnation, oxidation, sintering and cooling, and circulating for 3 to 7 times to obtain the compact diamond / silicon carbide ceramic matrix composite material, wherein the oxidation temperature is 200DEG C, the oxidation time is 6 to 10 hours, the sintering is performed at the temperature of between 800 and 1,200DEG C for 8to 15 hours under the protection of nitrogen, and the product is cooled together with the furnace. The method has low equipment requirement, is low in cost and can prepare the complicated-shaped compact diamond / silicon carbide ceramic matrix composite material.