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Method for preparing diamond/silicon carbide ceramic matrix composite material

A silicon carbide ceramic matrix and composite material technology, applied in the field of ceramic materials, can solve the problems of low equipment requirements, high equipment requirements, and high cost, and achieve the effects of low equipment requirements, simple impregnation process, and low-cost preparation

Inactive Publication Date: 2012-10-31
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a kind of preparation method of ceramic matrix composite material in order to overcome the problems existing in the existing method for preparing diamond / silicon carbide composite material such as high equipment requirements and high cost, which has low equipment requirements and low cost, and can Obtain high-performance diamond / silicon carbide composite parts with complex shapes

Method used

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  • Method for preparing diamond/silicon carbide ceramic matrix composite material
  • Method for preparing diamond/silicon carbide ceramic matrix composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] In terms of weight percentage, 9.7% of adhesive, 28.3% of silicon carbide powder with a particle size of 10 μm, and 62% of diamond particles with a particle size of 120 μm were wet mixed in n-hexane for 8 hours, dried, crushed, sieved and placed in a hydraulic press Upper compression molding, pressing pressure 75MPa, preoxidation in air at 200°C for 9h, sintering at 1000°C in nitrogen protective atmosphere for 12h, to obtain a density of 2.53g / cm 3 porous substrate.

[0018] The porous matrix is ​​vacuum impregnated in the precursor impregnation solution, the impregnation vacuum degree is -0.1MPa, the impregnation time is 1h, the mass concentration of the impregnation solution is 40%, pre-oxidized in air at 200°C for 9h, and sintered at 1000°C in a nitrogen protective atmosphere After 12 hours, after cooling with the furnace, vacuum impregnation, oxidation, sintering, and cooling were carried out under the same conditions. After 7 cycles, a dense diamond / silicon carbide...

Embodiment 2

[0020] In terms of weight percentage, 7.5% of adhesive, 21.5% of silicon carbide powder with a particle size of 20 μm, and 71% of diamond particles with a particle size of 140 μm were wet-mixed in n-hexane for 10 hours, dried, crushed, sieved and placed in a hydraulic press Upper compression molding, pressing pressure 225MPa, pre-oxidation in air at 200°C for 9h, sintering at 1200°C in a nitrogen protective atmosphere for 14h, to obtain a density of 2.61g / cm 3 porous substrate.

[0021] The porous matrix is ​​vacuum impregnated in the precursor impregnation solution, the impregnation vacuum degree is -0.1MPa, the impregnation time is 1h, the mass concentration of the impregnation solution is 30%, pre-oxidized in air at 200°C for 9h, and sintered at 1200°C in a nitrogen protective atmosphere After 14 hours, after cooling with the furnace, vacuum impregnation, oxidation, sintering, and cooling were carried out under the same conditions. After 7 cycles, a dense diamond / silicon ca...

Embodiment 3

[0023] In terms of weight percentage, 7.5% of adhesive, 44% of silicon carbide powder with a particle size of 10 μm, and 48.5% of diamond particles with a particle size of 120 μm were mixed in n-hexane for 8 hours, dried, crushed, sieved and placed in a hydraulic press Upper compression molding, pressing pressure 225MPa, pre-oxidation in air at 200°C for 9h, sintering at 1000°C in a nitrogen protective atmosphere for 8h, to obtain a density of 2.46g / cm 3 porous substrate.

[0024] The porous matrix is ​​vacuum impregnated in the precursor impregnation solution, the impregnation vacuum degree is -0.1MPa, the impregnation time is 1h, the mass concentration of the impregnation solution is 40%, pre-oxidized in air at 200°C for 9h, and sintered at 1000°C in a nitrogen protective atmosphere 8h, after cooling with the furnace, vacuum impregnation, oxidation, sintering, and cooling were carried out under the same conditions, and a dense diamond / silicon carbide ceramic matrix composite...

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Abstract

The invention discloses a method for preparing a diamond / silicon carbide ceramic matrix composite material, and belongs to the field of ceramic materials. The diamond / silicon carbide ceramic matrix composite material is characterized by being prepared from the following raw materials in percentage by weight: 5 to 15 percent of adhesive, 15 to 45 percent of silicon carbide powder, and 40 to 80 percent of diamond particle. The method comprises the following steps of: wet-mixing the raw materials for 8 to 24 hours, performing die forming under the pressure of 75 to 250MPa to obtain a blank of the composite material, oxidizing the blank in the air at the temperature of 200DEG C for 6 to 10 hours, sintering under the protection of nitrogen at the temperature of between 800 and 1,200DEG C for 8to 15 hours, and cooling together with a furnace; and performing vacuum impregnation, oxidation, sintering and cooling, and circulating for 3 to 7 times to obtain the compact diamond / silicon carbide ceramic matrix composite material, wherein the oxidation temperature is 200DEG C, the oxidation time is 6 to 10 hours, the sintering is performed at the temperature of between 800 and 1,200DEG C for 8to 15 hours under the protection of nitrogen, and the product is cooled together with the furnace. The method has low equipment requirement, is low in cost and can prepare the complicated-shaped compact diamond / silicon carbide ceramic matrix composite material.

Description

technical field [0001] The invention belongs to the field of ceramic materials, in particular to a method for preparing a diamond / silicon carbide ceramic-based electronic packaging composite material. Background technique [0002] The rapid development of the electronics industry has made the electronics industry one of the most promising industries, and the development of the electronics industry has also led to the development of electronic packaging technology that is closely related to it. High power, miniaturization, light weight, high-density assembly, low cost, high performance and high reliability have become the development direction of integrated circuits. However, the continuous improvement of integration and power will inevitably lead to a great increase in the heat generation rate of integrated circuits. Extreme heat can lead to an increase in the operating temperature of devices and circuit boards, which directly affects the stability and life of electronic dev...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B38/00C04B35/52C04B35/622
Inventor 何新波杨振亮吴茂任淑彬曲选辉
Owner UNIV OF SCI & TECH BEIJING
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