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Enhanced method of forming nickel silicide

A technology of nickel silicide and nickel layer, which is applied in the direction of liquid chemical plating, coating, semiconductor devices, etc., can solve problems such as damage to reliability, damage to the adhesion of metal to silicide, and achieve the effect of enhancing efficiency

Inactive Publication Date: 2011-04-27
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These oxides impair metal-to-silicide adhesion and ultimately the reliability of any electronic device in which the semiconductor is used

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Provide 6 doped single crystal silicon wafers. Each doped silicon wafer has an n+ doped area on the front side of the wafer, forming an emitter layer and a pn junction under the emitter layer. Adopted by Si 3 N 4 The formed passivation or anti-reflection layer coats the front side of each wafer. The front side of each wafer has a pattern for current traces through the anti-reflection layer, which exposes the surface of the silicon wafer. Each current trace traverses the entire length of the wafer. The current trace connects the bus at the end of each wafer and the center of each wafer. The back side of each wafer is p+ doped and includes aluminum electrodes.

[0054] The SCHMID DOD 300 inkjet printing device is used to selectively apply a hot melt anti-coating layer along the edge of the emitter layer area of ​​each silicon wafer to prevent the wafer from shunting during the metallization process. The hot-melt anti-coating layer includes 90 parts by weight of paraffin ...

Embodiment 2

[0059] The method described in Example 1 was repeated using 4 single crystal semiconductor wafers. The wafer was doped and metal coated as described in Example 1. Start sintering the metal-coated wafers in a Sierra Therm furnace at room temperature and raise the furnace temperature to 425°C within 10 seconds, and sinter at the peak setting of 475°C for 10 seconds. After the wafers reached room temperature, a piece of Cat. #600 Scotch transparent tape was applied to the metal coated surface of each wafer and then removed by hand from the wafer. The two tape samples have a smaller amount of silver adhering to the surface. The remaining two strips showed no visible signs of silver removal.

Embodiment 3

[0061] The method described in Example 1 was repeated using two single crystal semiconductor wafers. The wafer was doped and metal coated as described in Example 1. Start sintering the metal-coated wafers in a Sierra Therm furnace at room temperature and raise the furnace temperature to 425°C within 10 seconds, and sinter at the peak setting of 500°C for 10 seconds. After the wafers reached room temperature, a piece of Cat. #600 Scotch transparent tape was applied to the metal coated surface of each wafer and then removed by hand from the wafer. Both band samples showed no visible signs of silver removal from the current trace.

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Abstract

Silicon containing substrates are coated with nickel. The nickel is coated with a protective layer and the combination is heated to a sufficient temperature to form nickel silicide. The nickel silicide formation may be performed in oxygen containing environments. The method includes: a) providing a silicon containing substrate; b) depositing a nickel layer onto the silicon containing substrate; c) depositing a silver layer onto the nickel layer; and d) heating the silicon containing substrate with the nickel and silver layers to a sufficient temperature to form a nickel silicide.

Description

Technical field [0001] This application requires the priority benefit of the prior U.S. application No. 61 / 275,085 filed on August 25, 2009 in accordance with Article 119(e) of 35 U.S.C. The entire content of the application is incorporated herein by reference. [0002] The invention relates to an enhanced method for forming nickel silicide. More particularly, the present invention relates to an enhanced method for forming nickel silicide, in which the number of process steps is reduced. Background technique [0003] In semiconductors and advanced packaging technologies, silicides are generally used for various purposes, such as forming gate electrodes, ohmic contacts, interconnections, Schottky barrier diode contacts, photovoltaics, solar cells and optoelectronic components . The silicide can be formed by various techniques, including co-deposition, such as co-sputtering, co-evaporation, chemical vapor deposition (CVD), and thermal annealing of the metal layer deposited on the s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/283H01L21/768
CPCC25D5/12C23C18/1642H01L21/288H01L21/76889C23C18/1667H01L21/28518C23C18/32C23C18/1692C25D5/50C25D7/126C23C18/1605C23C18/1653C25D7/12Y02E10/50H01L31/022425
Inventor J·P·卡哈兰G·哈姆G·R·奥拉德伊斯D·L·雅克斯
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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