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Cleaning solution composition for cleaning substrate

A cleaning solution and composition technology, applied in the direction of photosensitive material processing, etc., can solve the problems of poor shape of photoresist film and insufficient cleaning power.

Active Publication Date: 2011-05-04
CHI MEI CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, if the substrate cleaning solution composition disclosed in reference 1 or reference 2 is applied to clean and remove the photoresist film, there are still problems such as insufficient cleaning power and poor shape of the photoresist film after cleaning.

Method used

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  • Cleaning solution composition for cleaning substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Take 30 parts by weight of propylene glycol monomethyl ether (PGME) and 70 parts by weight of propylene glycol monomethyl ether acetate (PGMEA), respectively add molecular sieve 4A (granular), and stir for 6 hours for pretreatment. Among them, molecular sieve and PGME or PGMEA The weight ratio is 2 / 100. Then, they were filtered under dry nitrogen to separate the molecular sieves. Then, the two solvents were uniformly mixed with a shaking stirrer to form a cleaning solution composition, and then evaluated by the following evaluation methods. The results are shown in Table 1.

[0037] [Evaluation method]

[0038] Moisture content

[0039] Put the detergent composition of the present invention into a moisture content titrator (manufactured by Mettler, model E665), and then use Karl Fischer reagent SS (hereinafter referred to as KF reagent SS, titration equivalent = 0.7 ~ 1.0 mgH 2 O / milliliter) for titration, the water content of the detergent composition can be calculated by th...

Embodiment 2

[0052] Take 20 parts by weight of propylene glycol monomethyl ether (PGME) and 80 parts by weight of propylene glycol monomethyl ether acetate (PGMEA), and distill them with a distillation device (distillation conditions: heating to 110°C under normal pressure and maintaining for 1 hour) Cool to room temperature), then individually add molecular sieve 4A (granular), and stir for 6 hours for pretreatment. The weight ratio of molecular sieve to PGME or PGMEA is 2 / 100. Then, they were filtered under dry nitrogen. After separating the molecular sieves, the two solvents were uniformly mixed with a shaking stirrer to form a cleaning solution composition, and then evaluated by the above evaluation methods. The results are shown in Table 1.

Embodiment 3

[0054] The operation method is the same as that of Example 1, except that PGME and PGMEA are added to molecular sieve 4A (granular) and stirred for 12 hours for pretreatment, and then evaluated by the above evaluation methods. The results are shown in Table 1.

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Abstract

The invention relates to a cleaning solution composition for cleaning a substrate, in particular to the cleaning solution composition for cleaning the substrate, which has the advantages of high cleaning capacity and good shape of a cleaned photoresist film. The water content of the cleaning solution composition is less than 200ppm.

Description

Technical field [0001] The present invention relates to a cleaning solution composition for cleaning substrates used in the fields of integrated circuits and / or thin film transistor liquid crystal displays (hereinafter referred to as LCDs), and in particular to a cleaning solution suitable for cleaning integrated circuits and / or LCDs A cleaning solution composition of photoresist on unnecessary parts of the periphery, edges and back of the substrate. Background technique [0002] It is generally used for manufacturing technology of semiconductor elements or LCD elements, and photolithography technology is still used. This technology forms a photoresist by coating photoresist on a silicon wafer or glass substrate, removing the solvent by baking, and then exposing and developing with various radiation such as ultraviolet, extreme ultraviolet, electron beam, X-ray, etc. pattern. [0003] The above-mentioned photoresist is usually applied by various recognized methods such as spin co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
Inventor 施俊安
Owner CHI MEI CORP