Ultra-deep subwavelength tunable nano photoetching structure and method based on surface plasma resonant cavity
A surface plasmon, deep subwavelength technology, applied in nanotechnology, microlithography exposure equipment, photolithography process of pattern surface, etc. problem, to achieve the effect of good visibility and deep exposure depth
Inactive Publication Date: 2013-04-10
SUZHOU UNIV
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Problems solved by technology
[0004] Using the above method can achieve higher resolution photolithography, but after the wavelength of the incident light is determined, changing the thickness of the photoresist has no effect on the etching grating period, and changing the thickness of the metal grating has little effect on the grating period, so , when this method is used for etching, the period adjustable range of the etched grating is small, that is, the resolution of the etched stripes is almost non-adjustable
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Embodiment 1
[0024] Embodiment one: see figure 1 As shown, it is a schematic diagram of the ultra-deep sub-wavelength nanolithography structure of this embodiment, and the SPP resonant cavity is composed of three parts. From top to bottom: SiO 2 The upper substrate layer, metal grating layer, photoresist layer, metal thin film layer, SiO 2 The lower base layer, the upper metal grating layer and the lower metal thin film layer are all made of silver (Ag), the incident P polarized light is vertically incident from top to bottom, the wavelength is 436nm, SiO 2 and the refractive index of the photoresist are 1.5 and 1.7, respectively, and the dielectric constant of Ag is ε Ag = -6.489 + 0.064i, the simulation experiment was carried out on the above structure, the Y direction was considered to be infinitely long during the simulation process, and the software used for the simulation was FDTD Solutions.
[0025] figure 2 and image 3 Shown are the electric field distribution diagrams of th...
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Abstract
The invention discloses an ultra-deep subwavelength tunable nano photoetching structure and method based on a surface plasma resonant cavity. The photoetching structure successively comprises an upper transparent substrate layer, a metal grating layer, a photoresist layer and a lower substrate layer, and is characterized in that a metal film layer is arranged between the photoresist layer and thelower substrate layer; and the metal grating layer, the photoresist layer and the metal film layer form the surface plasma resonant cavity structure. By utilizing the photoetching structure, the resolution ratio of a stripe can be changed by adjusting the thickness of the photoresist, the boundedness in the aspects of the resolution ratio, tenability and exposure depth of the traditional surface plasma photoetching technology can be broken through, and a new path is opened for tunable two-dimensional photoetching with ultra-deep exposure depth, large area and any shape.
Description
technical field [0001] The invention relates to a photolithographic manufacturing method of a nanoscale device, in particular to a nanophotolithographic method based on the surface plasmon effect. Background technique [0002] With the rapid development of nanotechnology, the fabrication of nanoscale devices is extremely important. Photolithography is widely used due to its advantages of easy replication, low production cost and suitable for large area production. However, the processing size of this lithography technology is limited by the optical diffraction limit, and it is difficult to break through the resolution of the half-wavelength order. At present, one of the main ways to improve the resolution is to use shorter wavelength light sources, such as extreme ultraviolet light source (EUV), soft X-ray, atomic beam, but the optical exposure light source of short wavelength is difficult to manufacture, and the service life is short, and the matching lens materials It is...
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IPC IPC(8): G03F7/00G03F7/20B82Y40/00
Inventor 王钦华葛伟豪曹冰
Owner SUZHOU UNIV