Thick film photoresist cleaning solution and cleaning method thereof
A cleaning solution and photoresist technology, applied in chemical instruments and methods, optics, opto-mechanical equipment, etc., can solve the problems of insufficient cleaning ability, strong corrosiveness of semiconductor wafer patterns and substrates, and achieve the effect of strengthening alkalinity
Active Publication Date: 2011-05-25
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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Problems solved by technology
[0009] The technical problem to be solved by the present invention is to provide a method for cleaning thick-film photoresist in view of the insufficient cleaning ability of existing thick-film photoresist cleaning solutions or the defects of strong corrosion to semiconductor wafer patterns and substrates. Photoresist cleaning solution with strong ability and low corrosion to semiconductor wafer patterns and substrates
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[0019] The present invention will be further described below through specific embodiments. The cleaning solution of the present invention can be obtained by uniformly mixing according to the distribution ratio of the components in the table.
[0020] Component and content of cleaning agent in table 1 embodiment 1~25
[0021]
[0022]
[0023] Table 2 part embodiment and comparative example formula
[0024]
[0025] Note: NA means that this component was not added.
[0026] In order to further illustrate the effect and principle of the present invention, the solutions in Table 2 are specially configured, see Table 2 for details. It should be noted that comparative example 1' cannot form a uniform solution in Table 2, which shows that the solubility of KOH in dimethyl sulfoxide is less. Comparative Example 2' shows that adding aryl alcohol, i.e. benzyl alcohol, can improve the solubility of KOH in the system and form a uniform solution. In order to further investiga...
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Abstract
The invention discloses thick film photoresist cleaning solution and a cleaning method thereof. The low-corrosion-performance thick film photoresist cleaning solution comprises dimethyl sulfoxide, potassium hydroxide, aromatic alcohol, alkylol amine and metal potassium. The photoresist cleaning solution disclosed by the invention can be used in a large temperature range (45 to 90 DEG C) for removing thick photoresist on substrates such as metals, metal alloys and dielectric media in a semiconductor manufacturing process, and is particularly suitable to remove high-degree-of-crosslinking negative photoresist with a thickness of over 100 micrometers. Meanwhile, the photoresist cleaning solution have very weak corrosion effect on copper, tin, lead and other metals, avoids damaging chip patterns and the substrates, and has a bright application prospect in micro electronic fields such as semiconductor chip cleaning field.
Description
technical field [0001] The invention relates to a low-etching photoresist cleaning solution and a cleaning method thereof. Background technique [0002] In the usual semiconductor manufacturing process, a photoresist mask is formed on the surface of metals such as silicon dioxide, Cu (copper), and low-k materials, and pattern transfer is performed by wet or dry etching after exposure. In the wafer microsphere implantation process (bumping technology), a photoresist material (photoresist) is also required to form a mask, which also needs to be removed after the microspheres are successfully implanted, but due to the thicker photoresist , is often difficult to remove completely. The more common methods to improve the removal effect are to extend the soaking time, increase the soaking temperature and use more aggressive solutions, but this often causes corrosion of the wafer substrate and microspheres, resulting in a significant decrease in wafer yield. [0003] At present, t...
Claims
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IPC IPC(8): G03F7/42
CPCC11D7/06C23G1/20H01L21/31133C11D7/34C11D11/0047G03F7/425G03F7/426C11D7/261C11D7/02C11D7/3218C11D2111/22
Inventor 刘兵彭洪修
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD