Ceramic coating comprising yttrium which is resistant to a reducing plasma

A technology of plasma and ceramic materials, applied in coating, metal material coating process, thin material processing, etc.

Active Publication Date: 2011-06-01
APPLIED MATERIALS INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] Particles are known to be a problem during semiconducto

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  • Ceramic coating comprising yttrium which is resistant to a reducing plasma
  • Ceramic coating comprising yttrium which is resistant to a reducing plasma
  • Ceramic coating comprising yttrium which is resistant to a reducing plasma

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Embodiment Construction

[0034] Before formally entering into the detailed description, it should be pointed out that unless the context clearly indicates otherwise, in the specification and claims, the singular forms "a", "an" and "the" include their plural referents.

[0035] As used herein, when the word "about" is used, it means within ±10% of the stated stated numerical value.

[0036] To facilitate understanding, the same reference numerals have been used wherever possible to refer to elements that are the same from view to view. It is conceivable that elements and features of one embodiment can be incorporated into other embodiments without further recitation. It should also be noted that the drawings are intended to illustrate only specific embodiments of the invention, where the views will particularly assist in understanding the embodiments of the invention. Not all embodiments require drawings to be understood, and the drawings are therefore not to be considered limiting of the scope of th...

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Abstract

Particulate generation has been a problem in semiconductor device processing in highly corrosive plasma environments. The problem is exacerbated when the plasma is a reducing plasma. Empirically produced data has shown that the formation of a plasma spray coated yttrium-comprising ceramic such as yttrium oxide, Y2O3-ZrO2 solid solution, YAG, and YF3 provides a low porosity coating with smooth and compacted surfaces when such ceramics are spray coated from a powder feed having an average effective diameter ranging from about 22 [mu]m to about 0.1 [mu]m. These spray-coated materials reduce the generation of particulates in corrosive reducing plasma environments.

Description

[0001] This application is related to two other applications related to semiconductor processing components using sprayed yttrium-containing ceramic materials. The sprayed yttrium-containing ceramic materials described above can generally be applied to aluminum or aluminum alloy substrates. The above-mentioned related application is the U.S. patent application 10 / 075,967 of Sun et al., the application date is February 14, 2002, and the title is "Yttrium Oxide Based Surface Coating For Semiconductor IC Processing Vacuum Chamber", and the above-mentioned application was filed on August 2004 No. 6,776,873, dated July 17; and US Patent Application 10 / 898,113 by Sun et al., filed July 22, 2004, entitled "Clean Dense Yttrium Oxide Containing Protecting Semiconductor Apparatus," filed at It was published on February 17, 2005, with the publication number US 2005 / 0037193A1, and it is still under review. The subject matter of the patents and applications cited above is hereby incorporate...

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Application Information

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IPC IPC(8): C23C4/10C23C4/12
CPCC23C4/105C23C4/11Y10T428/24355Y10T428/24997
Inventor 詹尼弗·Y·孙贺小明肯尼思·S·柯林斯托马斯·格瑞斯赛恩·撒奇元洁徐理段仁官
Owner APPLIED MATERIALS INC
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