Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ceramic coating comprising yttrium which is resistant to a reducing plasma

A ceramic coating, plasma technology, applied in coating, metal material coating process, thin material processing and other directions

Active Publication Date: 2014-07-09
APPLIED MATERIALS INC
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Particles are known to be a problem during semiconductor component processing in highly corrosive plasma environments

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ceramic coating comprising yttrium which is resistant to a reducing plasma
  • Ceramic coating comprising yttrium which is resistant to a reducing plasma
  • Ceramic coating comprising yttrium which is resistant to a reducing plasma

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] Before formally entering the detailed description, it should be pointed out that in this specification and the claims, the singular forms "a", "an" and "the" include plural referents thereof unless the context clearly dictates otherwise.

[0035] As used herein, when the word "about" is used, it means that the stated numerical value is accurate to within ±10%.

[0036] To aid understanding, the same reference numbers have been used wherever possible to refer to the same elements across the various views. It is contemplated that elements and features of one embodiment may be incorporated into other embodiments without further elaboration. It should also be noted that the accompanying drawings are intended to illustrate only specific embodiments of the invention, where the drawings will be particularly helpful in understanding the embodiments of the invention. Not all specific embodiments require the accompanying drawings to understand and are therefore not to be conside...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Particulate generation is often a problem with semiconductor component processing in a highly corrosive plasma environment. This problem is more serious when the above-mentioned plasma is reducing plasma. Experimental data shows that when forming a plasma-sprayed yttrium-containing ceramic (such as yttrium oxide, Y2O3-ZrO2 solid solution, YAG and YF3), when the average effective particle size range of the powder feed for spraying ceramics is between about 22 μm to about 0.1 μm provides a low porosity coating with a smooth and compact surface. These sprayed materials reduce particle generation in corrosive reducing plasma environments.

Description

[0001] This application is related to two other applications related to semiconductor processing components using sprayed yttrium-containing ceramic materials. The sprayed yttrium-containing ceramic materials described above can generally be applied to aluminum or aluminum alloy substrates. The above related application is US Patent Application 10 / 075,967 to Sun et al., filed February 14, 2002, and entitled "Yttrium Oxide Based Surface Coating For Semiconductor IC Processing Vacuum Chamber," filed August 2004. U.S. Patent No. 6,776,873, issued July 17; and U.S. Patent Application No. 10 / 898,113 to Sun et al., filed July 22, 2004, entitled "Clean Dense Yttrium Oxide Containing Protecting Semiconductor Apparatus," filed at It was published on February 17, 2005, and the publication number is US 2005 / 0037193A1, which is still under review. The subject matter of the above-cited patents and applications is hereby incorporated by reference into the present specification. technical f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C4/10C23C4/12
CPCY10T428/24355C23C4/105Y10T428/24997C23C4/11
Inventor 詹尼弗·Y·孙贺小明肯尼思·S·柯林斯托马斯·格瑞斯赛恩·撒奇元洁徐理段仁官
Owner APPLIED MATERIALS INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com