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Vapor phase repair and pore sealing of low-k dielectric materials

A technology of dielectric materials and vapor phase, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., and can solve problems such as damage

Active Publication Date: 2011-06-08
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, etching, ashing or cleaning of the LKD material may damage the LKD material

Method used

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  • Vapor phase repair and pore sealing of low-k dielectric materials
  • Vapor phase repair and pore sealing of low-k dielectric materials
  • Vapor phase repair and pore sealing of low-k dielectric materials

Examples

Experimental program
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Effect test

example 1

[0054] In an exemplary embodiment, vapor phase methyltrimethoxysilane (CH 3 -Si-(O-CH 3 ) 3 ) as a repair agent and vapor phase diethylamine ((CH 3 ) 2 NH) as a catalyst to repair the semiconductor substrate 100 with etch damaged nanoporous LKD material 110 .

[0055] A semiconductor substrate 100 with an etch-damaged low-k dielectric layer 110 is disposed on a substrate support 210 of a process chamber 200 . The process chamber 200 is evacuated to a pressure below 50 Torr, and the substrate support 210 and process chamber 200 are heated to a first temperature of approximately 100°C. Diethylamine vapor is delivered from chemical vapor delivery system 220A to process chamber 200 to a static pressure of 700 Torr. The semiconductor substrate 100 was exposed to the diethylamine vapor for about 20 seconds.

[0056] After the diethylamine vapor treatment is complete, the vapor is exhausted under dynamic vacuum using vacuum pump 240 to reduce the pressure of the process chamber...

example 2

[0061] In another embodiment, a semiconductor substrate 100 with etch-damaged nanoporous LKD material 110 uses vapor-phase bis(3-methyldimethoxysilyl-propyl)-N-methylamine as the encapsulant and vapor-phase Methylamine (CH 3 NH 2 ) as a catalyst to seal.

[0062] A semiconductor substrate 100 with an etch-damaged low-k dielectric layer 110 is disposed on a substrate support 210 of a process chamber 200 . The process chamber 200 is evacuated to a pressure below 50 Torr, and the substrate support 210 and process chamber 200 are heated to a first temperature of approximately 150°C. Methylamine vapor is delivered into process chamber 200 to a static pressure of 1800 Torr from chemical vapor delivery system 220A. The semiconductor substrate 100 was exposed to the methylamine vapor for about 60 seconds.

[0063] After the methylamine vapor treatment is completed, the vapor is exhausted under a dynamic vacuum using a vacuum pump 240 to reduce the pressure of the process chamber 2...

example 3

[0067] A silicon substrate sample with an overlying nanoporous LKD material (JSR LKD-5109, manufactured by JSR Corporation) was prepared. The samples were coated with photoresist, patterned, and subjected to reactive ion etching (RIE) to form trenches, followed by oxygen ashing to remove the photoresist. The RIE and photoresist removal creates regions of plasma damage around the etched openings in the patterned areas.

[0068] A first sample of the plasma-damaged JSR LKD-5109 layer was exposed to a vapor-phase trifluoroacetic acid catalyst prior to exposure to a vapor-phase n-propyltrimethoxysilane (n-PTMS) repair agent. A second sample of the plasma-damaged JSR LKD-5109 layer was repaired using n-PTMS and dissolved in supercritical CO 2 (SCCO 2 ) in the trifluoroacetic acid catalyst to process. The third sample is a control sample with an unrepaired plasma damaged layer of JSRLKD-5109. The fourth sample was another control sample with the JSRLKD-5109 layer as-deposited (i...

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Abstract

A method of treating a nanoporous low-k dielectric material formed on a semiconductor substrate is provided. The low-k dielectric material has etched openings with an etch damaged region containing silanol groups on exterior surfaces of the etched openings and on interior surfaces of interconnected pores. First, the low-k dielectric material is contacted with a vapor phase catalyst in an amount effective to form hydrogen bonds between the catalyst and the silanol groups in the etch damaged region, forming a catalytic intermediary. Second, the low-k dielectric material is contacted with a vapor phase alkoxysilane repair agent in an amount effective to react with about 50% or more of the silanol groups in the etch damaged region, such that the alkoxysilane repair agent reacts with the catalytic intermediary; and / or the low-k dielectric material is contacted with a vapor phase alkoxysilane sealing agent in an amount effective to prevent diffusion of an overlying barrier layer into the interconnected pores, such that the alkoxysilane sealing agent reacts with the catalytic intermediary.

Description

Background technique [0001] As integrated circuit device dimensions continue to decrease, the delay in signal propagation (ie, propagation delay) between multiple transistors has become an increasingly important parameter in determining device performance. Propagation delay is proportional to the product of the resistance (R) of the metal line and the capacitance (C) of the interlayer dielectric insulating material, (also known as RC delay). Therefore, to minimize propagation delay, it is beneficial to combine insulating materials comprising low dielectric constant materials with high conductivity metal combinations (or resistivity metals). Low-k dielectric (LKD) materials (k<3.0), such as organosilicate glass (OSG), organosilicate glass (OSG), tetraethoxysilane (TEOS), fluorosilicate glass (FSG), and carbon-doped Oxide, is also being emphasized as an alternative to silicon oxide (k=3.8-4.0). To obtain lower dielectric values, the LKD material may contain interconnected n...

Claims

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Application Information

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IPC IPC(8): H01L21/20H01L21/31
CPCH01L21/76814H01L21/31695H01L21/02337H01L21/3105H01L21/02126H01L21/76831H01L21/02343H01L21/76826H01L21/02203
Inventor 詹姆斯·德扬
Owner LAM RES CORP