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Cu-CeO2 contact material and preparation method thereof

A contact material, cu-ceo2 technology, used in cable/conductor manufacturing, metal/alloy conductors, electrical components, etc., can solve the problems of low resistance to deformation, unstable arc, high cost, and achieve excellent resistance to arc ablation performance, the effect of reducing the degree of arc ablation, good arc stability

Inactive Publication Date: 2012-01-11
XI'AN UNIVERSITY OF ARCHITECTURE AND TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the contact material widely used at home and abroad is silver-based material, but its cost is high
Although pure copper can be used as a component of the contact material due to its good electrical properties, it has poor oxidation resistance and low deformation resistance, and an oxide film is easily formed on the surface, resulting in an increase in contact resistance and an excessively high conductive temperature rise.
Therefore, poor ablation resistance and arc instability are the main influencing factors.

Method used

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  • Cu-CeO2 contact material and preparation method thereof
  • Cu-CeO2 contact material and preparation method thereof
  • Cu-CeO2 contact material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Such as figure 1 As shown, a Cu-CeO 2 A method of contacting a material comprising the steps of

[0020] The first step, weigh 50gCuSO 4 , dissolved in water to prepare CuSO with a mass concentration of 10% 4 aqueous solution;

[0021] The second step, weigh 0.2gCeO 2 , adding the CuSO prepared in the first step 4 In the solution, add 1% polyvinylpyrrolidone as a dispersant, stir until uniform to obtain a dispersion system;

[0022] In the third step, add 1.1 times of hydrazine hydrate to the obtained dispersion system, adjust the pH to 10 with sodium hydroxide, react at 70°C for 50 minutes, filter, and dry at 40°C for 3 hours to obtain a mixed powder;

[0023] The fourth step is to place the dried powder in the previous step in a vacuum furnace and keep the vacuum degree -3 Pa lasts for 2h;

[0024] The fifth step is to compact the mixed powder after passing through the vacuum furnace, and sinter at 850°C for 2 hours to obtain Cu-CeO 2 contact material.

Embodiment 2

[0026] Such as figure 1 As shown, a Cu-CeO 2 A method of contacting a material comprising the steps of

[0027] The first step, weigh 50gCuSO 4 , dissolved in water to prepare CuSO with a mass concentration of 5% 4 aqueous solution;

[0028] The second step, weigh 0.6gCeO 2 , adding the CuSO prepared in the first step 4 In the solution, add 1% polyvinylpyrrolidone as a dispersant, stir until uniform to obtain a dispersion system;

[0029] In the third step, add 1.1 times of hydrazine hydrate to the obtained dispersion system, adjust the pH to 11 with sodium hydroxide, react at 80°C for 30 minutes, filter, and dry at 50°C for 3 hours to obtain a mixed powder;

[0030] The fourth step is to place the dried powder in the previous step in a vacuum furnace and keep the vacuum degree -3 Pa lasts for 1h;

[0031] The fifth step is to compact the mixed powder after passing through the vacuum furnace, and sinter at 950°C for 2 hours to obtain Cu-CeO 2 contact material.

Embodiment 3

[0033] Such as figure 1 As shown, a Cu-CeO 2 A method of contacting a material comprising the steps of

[0034] The first step, weigh 50gCuSO 4 , dissolved in water to prepare CuSO with a mass concentration of 15% 4 aqueous solution;

[0035] The second step, weigh 1gCeO 2 , adding the CuSO prepared in the first step 4 In the solution, add 1% polyvinylpyrrolidone as a dispersant, stir until uniform to obtain a dispersion system;

[0036] In the third step, add 1.1 times of hydrazine hydrate to the obtained dispersion system, adjust the pH to 10.5 with sodium hydroxide, react at 75°C for 40 minutes, filter, and dry at 45°C for 3 hours to obtain a mixed powder;

[0037] The fourth step is to place the dried powder in the previous step in a vacuum furnace and keep the vacuum degree -3 Pa lasts for 1.5h;

[0038] The fifth step is to compact the mixed powder after passing through the vacuum furnace, and sinter at 900°C for 2 hours to obtain Cu-CeO 2 contact material.

[0...

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Abstract

The invention provides a Cu-CeO2 contact material. In the material, the weight of CeO2 accounts for 1-5% of the total weight of a Cu matrix, and by adding and uniformly distributing rare-earth metal oxides CeO2 in the Cu matrix, the hardness and strength of the material are further enhanced, and the physical properties of the material are improved, so that favorable arc dispersibility and arc stability are achieved and comprehensive properties of the contact material are improved. The invention further provides a preparation method of the contact material, which comprises the following steps:weighing CeO2, adding the CeO2 into a CuSO4 solution, then adding a dispersant to obtain a dispersion system, adding the obtained dispersion system into hydrazine hydrate, regulating pH to be 10-11 by using sodium hydroxide, reacting for 30-50 minutes at 70-80 DEG C, filtering and drying; placing the obtained powder into a vacuum furnace for high-temperature treatment; and compacting the mixed powder treated by the vacuum furnace into blanks, and sintering to obtain the Cu-CeO2 contact material.

Description

technical field [0001] The invention belongs to the technical field of metal composite material preparation, in particular to a Cu-CeO 2 Contact materials and methods of making them. Background technique [0002] Contact materials are the key materials of various switches, relays, contactors and other electrical appliances, which play the role of connecting, breaking and transmitting current. At present, the contact material widely used at home and abroad is silver-based material, but its cost is high. Although pure copper can be used as a component of the contact material due to its good electrical properties, it has poor oxidation resistance and low deformation resistance, and it is easy to form an oxide film on the surface, resulting in an increase in contact resistance and an excessively high conductive temperature rise. Therefore, poor ablation resistance and arc instability are the main influencing factors. Contents of the invention [0003] In order to overcome t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/02H01B13/00B22F9/24B22F3/16
Inventor 张秋利陈向阳周军宋永辉李国平姬振江
Owner XI'AN UNIVERSITY OF ARCHITECTURE AND TECHNOLOGY
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