Silicon drift detector with curved surface structure

Abstract

The invention discloses a silicon drift detector with a curved surface structure. The silicon drift detector of the invention comprises an N-type silicon wafer, a P-type drift electrode positioned on an incident face of the N-type silicon wafer, a reverse bias voltage applied to the incident face and an anode positioned on the back face of the N-type silicon wafer, and the silicon drift detector is characterized by further comprising a P-type curved surface drift electrode positioned on the back face of the N-type silicon wafer, and the curved surface is recessed towards the periphery at the position which is away from the anode by a set distance. The invention further discloses a manufacturing method of the silicon drift detector, in which the desired curved surface is obtained by corroding substrate surface with a corrosive agent. The silicon drift detection disclosed by the invention can be applied to X-ray spectral analysis and can also be applied to space exploration and other technical fields.

Description

technical field [0001] The invention relates to a semiconductor nuclear radiation detector used in an X-ray fluorescence spectrometer, in particular to an improved silicon drift detector used in space detection with higher performance requirements. Background technique [0002] The invention mainly aims at the key core part in energy dispersive X-ray energy spectrum analysis-semiconductor nuclear radiation detector. [0003] X-ray spectroscopic analysis is the use of X-rays to irradiate the sample, the elements contained in it are excited, and the fluorescent X-rays produced have different energy characteristics, which are separated and detected by the energy resolution capability and proportional working characteristics of the detector, so as to calculate An instrument for determining the content of elemental components in a sample. The detector is the core part of the X-ray fluorescence spectrometer, and its performance directly affects the working efficiency of the syste...

AI Technical Summary

Problems solved by technology

[0015] 1) if figure 1 As shown in Fig. 1, since the realization of the drift potential valley needs to provide a continuously inclined collecting electrode, additional heating will inevitably be generated, which will affect the use of the detector at low temperatures: as the working time of the detector increases, the heating will affect the performance of the detector. temperature, which reduces the stability of the detector and reduces the detection efficiency

[0016] 2) Between the P-type drift electrodes, in order to avoid punch-through, it is usually necessary to add a guard ring, which increases the difficulty of the process and the complexity of the design, and also reduces the reliability of the device

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