Micro inertial sensor with embedded transverse movable electrode

A moving electrode, lateral technology

Inactive Publication Date: 2012-04-18
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For comb-shaped capacitive sensors processed by bulk silicon technology such as Deep Reactive Particle Etching (Deep RIE), the aspect ratio of the plate capacitance is generally less than 27:1, which limits the increase in the mass of the sensor vibrator and Reduction of capacitor plate spacing
For small-pitch plate capacitors, the pressure film air damping is relatively large, which increases the mechanical noise of the sensor

Method used

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  • Micro inertial sensor with embedded transverse movable electrode
  • Micro inertial sensor with embedded transverse movable electrode
  • Micro inertial sensor with embedded transverse movable electrode

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with embodiments and drawings, but the present invention is by no means limited to the described embodiments.

[0024] Refer to Figure 1 (a), Figure 1 (b), Figure 2 (a), Figure 2 (b), image 3 with Figure 4 , Form two sets of center-symmetrical interdigitated fixed counter electrodes for detection on the first substrate 1, corresponding to the connection coupling electrode 2 between the fixed masses, and the connection line connecting the coupling electrode 2 and the lead electrode 4. The interdigitated fixed counter electrode is composed of comb-teeth electrodes 3 and lead-out electrodes that intersect in the transverse direction; a sensor anchor 13 fixed on the first substrate 1 is formed on the second substrate, and the second substrate is suspended on the second substrate. A strip-shaped sensor mass 25 above the substrate 1, two U-shaped sensor support beams connecting the sensor anchor 13 and the str...

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Abstract

The invention relates to a micro inertial sensor with an embedded transverse movable electrode. The conventional sensor has high noise, low stability and small range and bandwidth. The micro inertial sensor comprises a first substrate, a crossed comb tooth-shaped fixed counter electrode, a sensing device anchor point, a fixed mass block anchor point, a strip-shaped sensing device mass block, a U-shaped sensing device supporting beam, a double-grid vibrator pair, a U-shaped sensing device connecting beam, a comb-shaped fixed electrode, an extraction electrode, an electric insulating layer, a driving wire and a driving wire extraction electrode, wherein the crossed comb tooth-shaped fixed counter electrode is arranged on the upper surface of the first substrate for detection; the sensing device anchor point is fixed on the first substrate; the strip-shaped sensing device mass block of a second substrate is hung above the first substrate; the U-shaped sensing device supporting beam is used for connecting the sensing device anchor point with the strip-shaped sensing device mass block; a comb-shaped movable electrode is connected outside the double-grid vibrator pair; the U-shaped sensing device connecting beam is used for connecting the strip-shaped sensing device mass block with the double-grid vibrator pair; the comb-shaped fixed electrode is arranged on the fixed mass block; and the extraction electrode is arranged outside a sensing device. The micro inertial sensor has a novel structure and high resolution and flexibility.

Description

Technical field [0001] The invention belongs to the technical field of microelectronics and machinery, and relates to a micro-inertial sensor, in particular to a high-resolution micro-inertial sensor containing a pair of double-grid-shaped vibrators and embedded with lateral movable electrodes on the vibrators. Background technique [0002] In the past ten years, accelerometers made with micromechanical technology have developed rapidly. Its main acceleration detection technologies include piezoresistive detection, piezoelectric detection, thermal detection, resonance detection, electromagnetic detection, light detection, tunnel current detection, and capacitance detection. In addition, there are accelerometers based on these detection technologies, such as optical accelerometers, electromagnetic accelerometers, and capacitive accelerometers. The development of optical accelerometers is mainly to combine the advantages of light and micro-machines to make sensors with high electr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/02B81B3/00
Inventor 董林玺王晓迪
Owner HANGZHOU DIANZI UNIV
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