Photoelectric conversion device manufacturing method and photoelectric conversion device

Abstract

Provided is a method for fabricating a photoelectric conversion device in which current is prevented as much as possible from leaking via an intermediate contact layer separating groove. The method includes: a process of forming a top layer (91) mainly containing amorphous silicon; a process of forming on the top layer (91) an intermediate contact layer (93) electrically and optically connected to the top layer (91); a process of removing the intermediate contact layer (93) through irradiation with a pulsed laser and forming an intermediate contact layer separating groove (14) that reaches the top layer (91) to separate the intermediate contact layer (93); and a process of forming, on the intermediate contact layer (93) and in the intermediate contact layer separating groove (14), a bottom layer (92) that mainly contains microcrystalline silicon and that is electrically and optically connected to the intermediate contact layer (93). The intermediate contact layer separating groove (14) is terminated in an i-layer of the top layer (91).

Description

technical field [0001] The present invention relates to a method for manufacturing a photoelectric conversion device such as a thin-film solar cell and the photoelectric conversion device, and more particularly to a method for manufacturing a photoelectric conversion device and a photoelectric conversion device having intermediate contact layer separation grooves formed by separating an intermediate contact layer with a pulsed laser. Background technique [0002] Conventionally, in order to improve the photoelectric conversion efficiency of a thin-film solar cell, a structure in which a plurality of photoelectric conversion layers is stacked is known. For example, a tandem solar cell in which an amorphous silicon layer and a microcrystalline silicon layer are stacked is known. Such a tandem solar cell is formed by sequentially stacking a transparent electrode, an amorphous silicon layer, a microcrystalline silicon layer, and a back electrode on a light-transmitting substrate...

AI Technical Summary

Problems solved by technology

Considering that the recrystallized region is changed from the original amorphous silicon, it leads to lower resistance

This low-resistance recrystallized region becomes a new leakage path for current, resulting in a decrease in battery performance

[0010] The inventors of the present invention have found that the degree of lowering the resistance of the recrystallized region varies depending on the processing depth of the separation groove in the intermediate contact layer.

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