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Photoelectric conversion device manufacturing method and photoelectric conversion device

A technology for a photoelectric conversion device and a manufacturing method, which is applied in photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as long time intervals, and achieve the effect of improving efficiency and suppressing current.

Inactive Publication Date: 2013-03-27
MITSUBISHI HEAVY IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The reason for this is that in the nanosecond-order pulse width, the time interval is relatively long, so thermal diffusion proceeds to the wall portion forming the intermediate contact layer separation groove, and an excessive recrystallization region is formed on the wall portion.

Method used

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  • Photoelectric conversion device manufacturing method and photoelectric conversion device
  • Photoelectric conversion device manufacturing method and photoelectric conversion device
  • Photoelectric conversion device manufacturing method and photoelectric conversion device

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Embodiment Construction

[0037] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0038] figure 1 A vertical cross-section of a tandem silicon-based thin-film solar cell (photoelectric conversion device) is shown.

[0039] The solar cell 10 includes a glass substrate (light-transmitting substrate) 1 , a transparent electrode layer 2 , a top layer (first photoelectric conversion layer) 91 , an intermediate contact layer 93 , a bottom layer (second photoelectric conversion layer) 92 , and a back electrode layer 4 . In this embodiment, the top layer 91 is a photoelectric conversion layer mainly comprising an amorphous silicon-based semiconductor, and the bottom layer 92 is a photoelectric conversion layer mainly comprising a crystalline silicon-based semiconductor.

[0040] Here, "silicon-based" is a generic term including silicon (Si), silicon carbide (SiC), and silicon germanium (SiGe). In addition, "crystalline silicon system" refers to non-crysta...

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Abstract

Provided is a photoelectric conversion device fabrication method in which current leakage from an intermediate contact layer via an intermediate-contact-layer separating groove is prevented as much as possible. Included are a step of film-forming a top layer (91) having amorphous silicon as a main component; a step of film-forming, on the top layer (91), an intermediate contact layer (93) electrically and optically connected thereto; a step of separating the intermediate contact layer (93) by removing the intermediate contact layer (93) by irradiating it with a pulsed laser, forming an intermediate-contact-layer separating groove (14) that reaches the top layer (91); and a step of film-forming, on the intermediate contact layer (93) and inside the intermediate-contact-layer separating groove (14), a bottom layer (92) electrically and optically connected thereto and having microcrystalline silicon as a main component. A pulsed laser having a pulse width of 10 ps to 750 ps, inclusive, is used as the pulsed laser for separating the intermediate contact layer (93).

Description

technical field [0001] The present invention relates to a method for manufacturing a photoelectric conversion device such as a thin-film solar cell and the photoelectric conversion device, and more particularly to a method for manufacturing a photoelectric conversion device having a step of separating an intermediate contact layer with a pulsed laser. Background technique [0002] Conventionally, in order to improve the photoelectric conversion efficiency of a thin-film solar cell, a structure in which a plurality of photoelectric conversion layers is stacked is known. For example, a tandem solar cell in which an amorphous silicon layer and a microcrystalline silicon layer are stacked is known. Such a tandem solar cell is formed by sequentially stacking a transparent electrode, an amorphous silicon layer, a microcrystalline silicon layer, and a rear electrode on a light-transmitting substrate. In addition, there is known a technique in which an intermediate contact layer el...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/04H01L31/0463H01L31/0465H01L31/06H01L31/076
CPCY02E10/546H01L31/077H01L31/1824Y02E10/547H01L31/1804H01L31/202Y02E10/545H01L31/03921H01L31/182Y02E10/548Y02P70/50H01L31/04H01L31/18
Inventor 西宫立享宇田和孝川添浩平马场智义石出孝
Owner MITSUBISHI HEAVY IND LTD