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Aromatic ring-containing compound for a resist underlayer and resist underlayer composition

By using resist underlayer compositions containing aromatic ring compounds in the microelectronics industry, the problems of high cost and acid contamination of resist underlayer materials in the prior art are solved, and high etching selectivity and multiple etching resistance are achieved. It provides excellent optical and mechanical properties, is suitable for short-wavelength lithography technology, and improves the precision of semiconductor devices.

Active Publication Date: 2011-07-06
CHEIL IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods have high cost

Method used

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  • Aromatic ring-containing compound for a resist underlayer and resist underlayer composition
  • Aromatic ring-containing compound for a resist underlayer and resist underlayer composition
  • Aromatic ring-containing compound for a resist underlayer and resist underlayer composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] A solution comprising 30.1 g (0.1 mol) of coronene, 47.1 g (0.6 mol) of acetyl chloride, and 79.8 g (0.6 mol) of aluminum trichloride dissolved in 1000 g of toluene was placed in a place equipped with a mechanical stirrer, Cooler, 2L four-necked flask reactor, and stirring, then the reaction continued for 10 hours. After the reaction was complete, aluminum trichloride was removed using water. To the obtained compound was added 37.83 g (1.0 mol) of sodium borohydride, and then the reaction was continued for 17 hours. After the reaction was completed, reaction by-products were removed using a water / methanol mixture to obtain a compound represented by the following Chemical Formula 2 (average molecular weight=530, 1≤n1+n2+n3+n4+n5+n6≤6).

[0058] [chemical formula 2]

[0059]

Embodiment 2

[0061] A solution containing 30.1 g (0.1 mol) of coronene, 84.32 g (0.6 mol) of benzoyl chloride, and 79.8 g (0.6 mol) of aluminum trichloride dissolved in 1000 g of toluene was placed in a mixer equipped with a mechanical stirrer. , a cooler, a reactor of a 2L four-necked flask, and stirred, and the reaction continued for 10 hours. After the reaction was complete, aluminum trichloride was removed using water. To the obtained compound was added 37.83 g (1.0 mol) of sodium borohydride, and then the reaction was continued for 19 hours. After the reaction was completed, reaction by-products were removed using a water / methanol mixture to obtain a compound represented by the following Chemical Formula 3 (average molecular weight=910, 2≤n1+n2+n3+n4+n5+n6≤6).

[0062] [chemical formula 3]

[0063]

Embodiment 3

[0065] A solution containing 30.1 g (0.1 mol) of coronene, 114.01 g (0.6 mol) of 2-naphtoyl chloride, and 79.8 g (0.6 mol) of aluminum trichloride dissolved in 1000 g of toluene was placed in In a reactor equipped with a mechanical stirrer, a cooler, and a 2L four-necked flask, and stirred, the reaction was continued for 10 hours. After the reaction was complete, aluminum trichloride was removed using water. To the obtained compound was added 37.83 g (1.0 mol) of sodium borohydride, and then the reaction was continued for 19 hours. After the reaction was completed, reaction by-products were removed using a water / methanol mixture to obtain a compound represented by the following Chemical Formula 4 (average molecular weight=980, 2≤n1+n2+n3+n4+n5+n6≤6).

[0066] [chemical formula 4]

[0067]

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Abstract

The present invention discloses an aromatic ring-containing compound represented by a following chemical formula 1 and a resist underlayer composition containing the compound. In the chemical formula 1, each substituted group is defined as embodiments. The aromatic ring-containing compound may has excellent optical performance, mechanical characteristics and etching selection characteristics, and may be applied by a rotary coating method. The aromatic ring-containing compound is useful for a lithography process using short wavelength and shows minimal content of remaining acid. The invention also provides a method of patterning elements using the resist underlayer composition.

Description

technical field [0001] The disclosure relates to an aromatic ring-containing compound for an underlayer of a resist, and to an underlayer composition of a resist. Background technique [0002] In the microelectronics industry and other related industries, including the fabrication of microstructures (eg, micromechanical devices and magneto-resist heads), there is a continuing need to reduce the shape and size of structures. In the microelectronics industry, there is a need to reduce the size of microelectronic devices in order to provide many circuits for a given chip size. [0003] Efficient lithographic techniques are necessary to achieve reduced structural shape dimensions. [0004] A typical photolithographic method involves the following processes. First, a resist is coated on an underlying material and exposed to radiation to form a resist layer. Thereafter, the resist layer is developed to provide a patterned resist layer, and the underlying material exposed in the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C33/26C07C33/36G03F7/11
CPCC07C2103/54C07C33/26C07C2101/14C07C33/36G03F7/091C07C2601/14C07C2603/54C07C13/62C07C15/56
Inventor 赵诚昱田桓承金旼秀吴丞培宋知胤
Owner CHEIL IND INC
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