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Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma

A technology of radio frequency plasma and atomic layer deposition, which is applied in the field of plasma assistance, can solve problems affecting the quality of deposited films and limit the use of temperature-sensitive substrate materials, so as to ensure the quality of deposited films and prevent the rise and decrease of chamber temperature. effect of influence

Inactive Publication Date: 2011-07-20
DONGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the past, the plasma (Plasma) was always turned on during the film deposition process of PEALD. On the one hand, the ions generated in the plasma would bombard the deposited film and affect the quality of the deposited film. On the other hand, the plasma would heat the entire reaction chamber and limit the use of temperature-sensitive substrate materials

Method used

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  • Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma
  • Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma
  • Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma

Examples

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Embodiment 1

[0026] Such as figure 1As shown, it is a schematic structural diagram of a pulse-modulated radio-frequency plasma-enhanced atomic layer deposition device. The pulse-modulated radio-frequency plasma-enhanced atomic layer deposition device includes a first precursor manual valve 2, a first precursor pneumatic valve 3, a second precursor Body manual valve 5, second precursor pneumatic valve 6, brake gas pneumatic valve 9, integrated control module 10, vacuum reaction chamber 11, plasma electrode 12, substrate 13 (as a ground electrode), vacuum mechanical pump 15, radio frequency Power matching device 16, pulse modulation radio frequency power supply 17, pulse delayer 18 and computer 19. The bottom of the vacuum reaction chamber 11 is provided with a substrate 13, the vacuum reaction chamber 11 is respectively connected to the vacuum mechanical pump 15 and the precursor input pipeline, the top of the vacuum reaction chamber 11 is provided with a plasma electrode 12, and the plasma...

Embodiment 2

[0040] Similar to Embodiment 1, the difference is that quartz glass is used as the material of the substrate 21, and the plasma electrode 12 is an aluminum electrode with a thickness of 10 mm. The height of the vacuum reaction chamber 11 is 50 mm. The substrate temperature is set to 200°C, the power of the RF power matcher 16 is adjusted to 100W, and other parameter settings and processes are consistent with those in Example 1, and uniformly deposited Al can also be obtained on the quartz glass substrate. 2 o 3 film.

Embodiment 3

[0042] Similar to Example 1, the difference is that polyethylene terephthalate is used as the material of the substrate 21, and the plasma electrode 12 is a copper electrode with a thickness of 5 mm. The height of the vacuum reaction chamber 11 is 40 mm. Set the substrate temperature to 60°C, adjust the power of the RF power matcher 16 to 70W, and other parameter settings and processes are consistent with those in Example 1, and uniformly deposited Al can also be obtained on the PET substrate. 2 o 3 film.

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Abstract

The intention relates to a device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma. The device comprises a vacuum reaction chamber, wherein a substrate is arranged at the inner bottom of the vacuum reaction chamber, and the vacuum reaction chamber is respectively connected with a vacuum mechanical pump and a precursor input pipeline. The device is characterized in that a plasma electrode is arranged at the inner top of the vacuum reaction chamber and is sequentially connected with a radio-frequency power matcher, a pulse modulation radio-frequency power supply and a pulse delay unit. In the method, plasma is generated by the pulse modulation radio-frequency power supply to assist deposition when at least one precursor is deposited. The device and method provided by the invention reduces the impact of ion bombardment on the deposited film during deposition process and prevents the temperature increase of the cavity during deposition process.

Description

technical field [0001] The present invention relates to a device and method for pulse-modulated radio-frequency plasma enhanced atomic layer deposition, in particular to a device and method for adding pulse-modulated radio-frequency plasma in the single-layer deposition process in an atomic layer deposition chamber to enhance the strength of the precursor Reactivity, reducing the temperature required for the deposition process to achieve the deposition of temperature-sensitive polymer substrates, etc., and ensuring the uniformity of the deposited film, belongs to the technical field of plasma modification of materials. Background technique [0002] Atomic Layer Deposition (ALD) technology, originally called Atomic Layer Epitaxy (ALE), is also known as Atomic Layer Chemical Vapor Deposition (Atomic Layer Chemical Vapor Deposition). It was first proposed by Finnish scientists in the 1970s and used in polycrystalline fluorescent materials ZnS:Mn and amorphous Al 2 o 3 develop...

Claims

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Application Information

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IPC IPC(8): C23C16/505
Inventor 石建军刘新坤黄晓江梅永丰
Owner DONGHUA UNIV
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